FR2239737A1 - - Google Patents
Info
- Publication number
- FR2239737A1 FR2239737A1 FR7426264A FR7426264A FR2239737A1 FR 2239737 A1 FR2239737 A1 FR 2239737A1 FR 7426264 A FR7426264 A FR 7426264A FR 7426264 A FR7426264 A FR 7426264A FR 2239737 A1 FR2239737 A1 FR 2239737A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38513873A | 1973-08-02 | 1973-08-02 | |
| US38499473A | 1973-08-02 | 1973-08-02 | |
| US38520173A | 1973-08-02 | 1973-08-02 | |
| US05/385,122 US3940747A (en) | 1973-08-02 | 1973-08-02 | High density, high speed random access read-write memory |
| US385203A US3909631A (en) | 1973-08-02 | 1973-08-02 | Pre-charge voltage generating system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2239737A1 true FR2239737A1 (xx) | 1975-02-28 |
| FR2239737B1 FR2239737B1 (xx) | 1980-12-05 |
Family
ID=27541399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7426264A Expired FR2239737B1 (xx) | 1973-08-02 | 1974-07-29 |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5046049A (xx) |
| BE (1) | BE818317A (xx) |
| CH (1) | CH594955A5 (xx) |
| DD (1) | DD116339A5 (xx) |
| DE (1) | DE2437396A1 (xx) |
| FR (1) | FR2239737B1 (xx) |
| GB (1) | GB1484941A (xx) |
| HU (1) | HU171057B (xx) |
| IT (1) | IT1018806B (xx) |
| NL (1) | NL7410423A (xx) |
| RO (1) | RO82918B (xx) |
| SE (1) | SE7409882L (xx) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2337917A1 (fr) * | 1976-01-08 | 1977-08-05 | Mostek Corp | Memoire a acces direct en circuit integre |
| FR2521761A1 (fr) * | 1982-02-15 | 1983-08-19 | Hitachi Ltd | Memoire a semi-conducteurs |
| FR2553558A1 (fr) * | 1983-10-17 | 1985-04-19 | Hitachi Ltd | Memoire dynamique |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS525224A (en) * | 1975-07-02 | 1977-01-14 | Hitachi Ltd | 1trs-type memory cell |
| DE2646245A1 (de) * | 1975-10-28 | 1977-05-05 | Motorola Inc | Speicherschaltung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3514765A (en) * | 1969-05-23 | 1970-05-26 | Shell Oil Co | Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories |
| US3678473A (en) * | 1970-06-04 | 1972-07-18 | Shell Oil Co | Read-write circuit for capacitive memory arrays |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3838404A (en) * | 1973-05-17 | 1974-09-24 | Teletype Corp | Random access memory system and cell |
-
1974
- 1974-07-29 FR FR7426264A patent/FR2239737B1/fr not_active Expired
- 1974-07-31 SE SE7409882A patent/SE7409882L/ not_active Application Discontinuation
- 1974-07-31 RO RO79624A patent/RO82918B/ro unknown
- 1974-07-31 BE BE147137A patent/BE818317A/xx unknown
- 1974-08-01 GB GB3398874A patent/GB1484941A/en not_active Expired
- 1974-08-01 JP JP49088633A patent/JPS5046049A/ja active Pending
- 1974-08-01 IT IT5240774A patent/IT1018806B/it active
- 1974-08-01 HU HUTE000791 patent/HU171057B/hu unknown
- 1974-08-02 DE DE19742437396 patent/DE2437396A1/de not_active Withdrawn
- 1974-08-02 DD DD18029474A patent/DD116339A5/xx unknown
- 1974-08-02 NL NL7410423A patent/NL7410423A/xx not_active Application Discontinuation
- 1974-08-02 CH CH1065574A patent/CH594955A5/xx not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2337917A1 (fr) * | 1976-01-08 | 1977-08-05 | Mostek Corp | Memoire a acces direct en circuit integre |
| FR2521761A1 (fr) * | 1982-02-15 | 1983-08-19 | Hitachi Ltd | Memoire a semi-conducteurs |
| FR2553558A1 (fr) * | 1983-10-17 | 1985-04-19 | Hitachi Ltd | Memoire dynamique |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1018806B (it) | 1977-10-20 |
| RO82918A (ro) | 1984-08-17 |
| FR2239737B1 (xx) | 1980-12-05 |
| NL7410423A (nl) | 1975-02-04 |
| RO82918B (ro) | 1984-09-30 |
| SE7409882L (xx) | 1975-02-03 |
| DE2437396A1 (de) | 1975-02-13 |
| GB1484941A (en) | 1977-09-08 |
| DD116339A5 (xx) | 1975-11-12 |
| BE818317A (fr) | 1974-11-18 |
| CH594955A5 (xx) | 1978-01-31 |
| JPS5046049A (xx) | 1975-04-24 |
| HU171057B (hu) | 1977-10-28 |