FR2235454B1 - - Google Patents
Info
- Publication number
- FR2235454B1 FR2235454B1 FR7418491A FR7418491A FR2235454B1 FR 2235454 B1 FR2235454 B1 FR 2235454B1 FR 7418491 A FR7418491 A FR 7418491A FR 7418491 A FR7418491 A FR 7418491A FR 2235454 B1 FR2235454 B1 FR 2235454B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37522273A | 1973-06-29 | 1973-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2235454A1 FR2235454A1 (de) | 1975-01-24 |
FR2235454B1 true FR2235454B1 (de) | 1977-09-30 |
Family
ID=23480012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7418491A Expired FR2235454B1 (de) | 1973-06-29 | 1974-05-21 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5024038A (de) |
FR (1) | FR2235454B1 (de) |
GB (1) | GB1466007A (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0003413A3 (de) * | 1978-01-19 | 1979-08-22 | Sperry Corporation | Massnahmen zur Verbesserung eines Halbleiterspeichers |
JPS54136224A (en) * | 1978-04-14 | 1979-10-23 | Matsushita Electronics Corp | Target electrode for color pick up tube and its manufacture |
JPS5512688A (en) * | 1978-07-14 | 1980-01-29 | Matsushita Electronics Corp | Target electrode for color camera |
JPS5584976A (en) * | 1978-12-22 | 1980-06-26 | Nippon Telegraph & Telephone | Surface treatment of transparent electrode layer |
JPS55138278A (en) * | 1979-04-11 | 1980-10-28 | Hitachi Ltd | Semiconducor non-volatile memory |
JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
JPS5641644A (en) * | 1979-09-14 | 1981-04-18 | Hitachi Ltd | Manufacture of image pick-up tube |
JPS5641640A (en) * | 1979-09-14 | 1981-04-18 | Hitachi Ltd | Manufacture of image pick-up tube |
JPS5654702A (en) * | 1979-10-11 | 1981-05-14 | Hitachi Ltd | Method of manufactuping transparent conductive film |
DE3138947A1 (de) * | 1981-09-30 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | Speicherzelle mit einem doppel-gate feldeffekttransistor und verfahren zu ihrem betrieb |
JPH063762B2 (ja) * | 1985-10-30 | 1994-01-12 | ロ−ム株式会社 | 酸化金属皮膜抵抗器の製造方法 |
-
1974
- 1974-05-17 JP JP5462174A patent/JPS5024038A/ja active Pending
- 1974-05-21 FR FR7418491A patent/FR2235454B1/fr not_active Expired
- 1974-05-29 GB GB2376274A patent/GB1466007A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5024038A (de) | 1975-03-14 |
FR2235454A1 (de) | 1975-01-24 |
GB1466007A (en) | 1977-03-02 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |