FR2235454A1 - - Google Patents

Info

Publication number
FR2235454A1
FR2235454A1 FR7418491A FR7418491A FR2235454A1 FR 2235454 A1 FR2235454 A1 FR 2235454A1 FR 7418491 A FR7418491 A FR 7418491A FR 7418491 A FR7418491 A FR 7418491A FR 2235454 A1 FR2235454 A1 FR 2235454A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7418491A
Other languages
French (fr)
Other versions
FR2235454B1 (ja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2235454A1 publication Critical patent/FR2235454A1/fr
Application granted granted Critical
Publication of FR2235454B1 publication Critical patent/FR2235454B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
FR7418491A 1973-06-29 1974-05-21 Expired FR2235454B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37522273A 1973-06-29 1973-06-29

Publications (2)

Publication Number Publication Date
FR2235454A1 true FR2235454A1 (ja) 1975-01-24
FR2235454B1 FR2235454B1 (ja) 1977-09-30

Family

ID=23480012

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418491A Expired FR2235454B1 (ja) 1973-06-29 1974-05-21

Country Status (3)

Country Link
JP (1) JPS5024038A (ja)
FR (1) FR2235454B1 (ja)
GB (1) GB1466007A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003413A2 (en) * 1978-01-19 1979-08-08 Sperry Corporation Improvements relating to semiconductor memories
EP0075739A2 (de) * 1981-09-30 1983-04-06 Siemens Aktiengesellschaft Speicherzelle mit einem Doppel-Gate Feldeffekttransistor und Verfahren zu ihrem Betrieb

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136224A (en) * 1978-04-14 1979-10-23 Matsushita Electronics Corp Target electrode for color pick up tube and its manufacture
JPS5512688A (en) * 1978-07-14 1980-01-29 Matsushita Electronics Corp Target electrode for color camera
JPS5584976A (en) * 1978-12-22 1980-06-26 Nippon Telegraph & Telephone Surface treatment of transparent electrode layer
JPS55138278A (en) * 1979-04-11 1980-10-28 Hitachi Ltd Semiconducor non-volatile memory
JPS55156371A (en) * 1979-05-24 1980-12-05 Toshiba Corp Non-volatile semiconductor memory device
JPS5641640A (en) * 1979-09-14 1981-04-18 Hitachi Ltd Manufacture of image pick-up tube
JPS5641644A (en) * 1979-09-14 1981-04-18 Hitachi Ltd Manufacture of image pick-up tube
JPS5654702A (en) * 1979-10-11 1981-05-14 Hitachi Ltd Method of manufactuping transparent conductive film
JPH063762B2 (ja) * 1985-10-30 1994-01-12 ロ−ム株式会社 酸化金属皮膜抵抗器の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003413A2 (en) * 1978-01-19 1979-08-08 Sperry Corporation Improvements relating to semiconductor memories
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories
EP0075739A2 (de) * 1981-09-30 1983-04-06 Siemens Aktiengesellschaft Speicherzelle mit einem Doppel-Gate Feldeffekttransistor und Verfahren zu ihrem Betrieb
EP0075739A3 (en) * 1981-09-30 1983-11-16 Siemens Aktiengesellschaft Dual-gate field effect transistor memory cell, and method of operating the same

Also Published As

Publication number Publication date
JPS5024038A (ja) 1975-03-14
FR2235454B1 (ja) 1977-09-30
GB1466007A (en) 1977-03-02

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Legal Events

Date Code Title Description
ST Notification of lapse