FR2230082A1 - - Google Patents

Info

Publication number
FR2230082A1
FR2230082A1 FR7417098A FR7417098A FR2230082A1 FR 2230082 A1 FR2230082 A1 FR 2230082A1 FR 7417098 A FR7417098 A FR 7417098A FR 7417098 A FR7417098 A FR 7417098A FR 2230082 A1 FR2230082 A1 FR 2230082A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7417098A
Other versions
FR2230082B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2230082A1 publication Critical patent/FR2230082A1/fr
Application granted granted Critical
Publication of FR2230082B1 publication Critical patent/FR2230082B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
FR7417098A 1973-05-16 1974-05-16 Expired FR2230082B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00360996A US3851379A (en) 1973-05-16 1973-05-16 Solid state components

Publications (2)

Publication Number Publication Date
FR2230082A1 true FR2230082A1 (fr) 1974-12-13
FR2230082B1 FR2230082B1 (fr) 1979-02-16

Family

ID=23420237

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7417098A Expired FR2230082B1 (fr) 1973-05-16 1974-05-16

Country Status (5)

Country Link
US (1) US3851379A (fr)
JP (1) JPS546357B2 (fr)
DE (1) DE2423670A1 (fr)
FR (1) FR2230082B1 (fr)
GB (1) GB1465629A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2436504A1 (fr) * 1978-09-15 1980-04-11 Westinghouse Electric Corp Nouveau transistor a effet de champ mos
FR2555816A1 (fr) * 1983-11-25 1985-05-31 Thomson Csf Transistor a effet de champ a structure verticale
FR2557368A1 (fr) * 1983-12-27 1985-06-28 Thomson Csf Transistor a effet de champ, de structure verticale submicronique, et son procede de realisation

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2341154C2 (de) * 1973-08-14 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
US3951708A (en) * 1974-10-15 1976-04-20 Rca Corporation Method of manufacturing a semiconductor device
US4070690A (en) * 1976-08-17 1978-01-24 Westinghouse Electric Corporation VMOS transistor
JPS5380976A (en) * 1976-12-25 1978-07-17 Toshiba Corp Semiconductor device
US4129879A (en) * 1977-04-21 1978-12-12 General Electric Company Vertical field effect transistor
JPS6013313B2 (ja) * 1977-05-19 1985-04-06 松下電器産業株式会社 半導体装置の製造方法
JPS5733358Y2 (fr) * 1977-12-28 1982-07-22
US4198250A (en) * 1979-02-05 1980-04-15 Intel Corporation Shadow masking process for forming source and drain regions for field-effect transistors and like regions
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
US4377899A (en) * 1979-11-19 1983-03-29 Sumitomo Electric Industries, Ltd. Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US4393391A (en) * 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
FR2507821A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor a effet de champ vertical a jonction et procede de fabrication
US4449285A (en) * 1981-08-19 1984-05-22 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a vertical channel transistor
US4570174A (en) * 1981-08-21 1986-02-11 The United States Of America As Represented By The Secretary Of The Army Vertical MESFET with air spaced gate electrode
US4419811A (en) * 1982-04-26 1983-12-13 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask
US4625388A (en) * 1982-04-26 1986-12-02 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask and resulting structure
US4525919A (en) * 1982-06-16 1985-07-02 Raytheon Company Forming sub-micron electrodes by oblique deposition
US4738936A (en) * 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
JPS6123698U (ja) * 1984-07-19 1986-02-12 月男 原田 斜列型瓦焼成用保持具
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
JP3461277B2 (ja) * 1998-01-23 2003-10-27 株式会社東芝 半導体装置及びその製造方法
US6667215B2 (en) * 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US3387360A (en) * 1965-04-01 1968-06-11 Sony Corp Method of making a semiconductor device
US3761785A (en) * 1971-04-23 1973-09-25 Bell Telephone Labor Inc Methods for making transistor structures
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2436504A1 (fr) * 1978-09-15 1980-04-11 Westinghouse Electric Corp Nouveau transistor a effet de champ mos
FR2555816A1 (fr) * 1983-11-25 1985-05-31 Thomson Csf Transistor a effet de champ a structure verticale
EP0145567A2 (fr) * 1983-11-25 1985-06-19 Thomson-Csf Transistor à effet de champ à structure verticale
EP0145567A3 (en) * 1983-11-25 1985-07-24 Thomson-Csf Field-effect transistor having a vertical structure
FR2557368A1 (fr) * 1983-12-27 1985-06-28 Thomson Csf Transistor a effet de champ, de structure verticale submicronique, et son procede de realisation
EP0149390A2 (fr) * 1983-12-27 1985-07-24 Thomson-Csf Transistor à effet de champ, de structure verticale submicronique, et son procédé de réalisation
EP0149390A3 (en) * 1983-12-27 1985-09-18 Thomson-Csf Field effect transistor with a vertical sub-micronic structure and process for its production
US4698654A (en) * 1983-12-27 1987-10-06 Thomson-Csf Field effect transistor with a submicron vertical structure and its production process

Also Published As

Publication number Publication date
DE2423670A1 (de) 1974-12-05
FR2230082B1 (fr) 1979-02-16
US3851379A (en) 1974-12-03
JPS5019379A (fr) 1975-02-28
JPS546357B2 (fr) 1979-03-27
GB1465629A (en) 1977-02-23

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Legal Events

Date Code Title Description
ST Notification of lapse