FR2191270B1 - - Google Patents

Info

Publication number
FR2191270B1
FR2191270B1 FR7321783A FR7321783A FR2191270B1 FR 2191270 B1 FR2191270 B1 FR 2191270B1 FR 7321783 A FR7321783 A FR 7321783A FR 7321783 A FR7321783 A FR 7321783A FR 2191270 B1 FR2191270 B1 FR 2191270B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7321783A
Other languages
French (fr)
Other versions
FR2191270A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2191270A1 publication Critical patent/FR2191270A1/fr
Application granted granted Critical
Publication of FR2191270B1 publication Critical patent/FR2191270B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10W10/012
    • H10W10/13
    • H10W20/20
FR7321783A 1972-06-30 1973-06-06 Expired FR2191270B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26777172A 1972-06-30 1972-06-30

Publications (2)

Publication Number Publication Date
FR2191270A1 FR2191270A1 (enExample) 1974-02-01
FR2191270B1 true FR2191270B1 (enExample) 1977-07-29

Family

ID=23020055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7321783A Expired FR2191270B1 (enExample) 1972-06-30 1973-06-06

Country Status (6)

Country Link
JP (1) JPS528229B2 (enExample)
CA (1) CA1005925A (enExample)
DE (1) DE2318912A1 (enExample)
FR (1) FR2191270B1 (enExample)
GB (1) GB1422586A (enExample)
IT (1) IT987426B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2554450A1 (de) * 1975-12-03 1977-06-16 Siemens Ag Verfahren zur herstellung einer integrierten schaltung
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
CA1186808A (en) * 1981-11-06 1985-05-07 Sidney I. Soclof Method of fabrication of dielectrically isolated cmos device with an isolated slot
JPS58100441A (ja) * 1981-12-10 1983-06-15 Toshiba Corp 半導体装置の製造方法
JPS58212165A (ja) * 1983-05-23 1983-12-09 Nec Corp 半導体装置
JPH0616549B2 (ja) * 1984-04-17 1994-03-02 三菱電機株式会社 半導体集積回路装置
JP2003124514A (ja) * 2001-10-17 2003-04-25 Sony Corp 半導体発光素子及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
FR2080849A6 (enExample) * 1970-02-06 1971-11-26 Radiotechnique Compelec
US3698966A (en) * 1970-02-26 1972-10-17 North American Rockwell Processes using a masking layer for producing field effect devices having oxide isolation
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions

Also Published As

Publication number Publication date
CA1005925A (en) 1977-02-22
JPS528229B2 (enExample) 1977-03-08
JPS4945688A (enExample) 1974-05-01
DE2318912A1 (de) 1974-01-17
GB1422586A (en) 1976-01-28
FR2191270A1 (enExample) 1974-02-01
IT987426B (it) 1975-02-20

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Legal Events

Date Code Title Description
ST Notification of lapse