FR2172191A1 - - Google Patents

Info

Publication number
FR2172191A1
FR2172191A1 FR7305086A FR7305086A FR2172191A1 FR 2172191 A1 FR2172191 A1 FR 2172191A1 FR 7305086 A FR7305086 A FR 7305086A FR 7305086 A FR7305086 A FR 7305086A FR 2172191 A1 FR2172191 A1 FR 2172191A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7305086A
Other languages
French (fr)
Other versions
FR2172191B1 (cs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2172191A1 publication Critical patent/FR2172191A1/fr
Application granted granted Critical
Publication of FR2172191B1 publication Critical patent/FR2172191B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR7305086A 1972-02-18 1973-02-08 Expired FR2172191B1 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2207654A DE2207654B2 (de) 1972-02-18 1972-02-18 Verfahren zum Herstellen einer Zenerdiode

Publications (2)

Publication Number Publication Date
FR2172191A1 true FR2172191A1 (cs) 1973-09-28
FR2172191B1 FR2172191B1 (cs) 1978-04-14

Family

ID=5836353

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7305086A Expired FR2172191B1 (cs) 1972-02-18 1973-02-08

Country Status (5)

Country Link
AU (1) AU463838B2 (cs)
DE (1) DE2207654B2 (cs)
FR (1) FR2172191B1 (cs)
GB (1) GB1364035A (cs)
IT (1) IT979130B (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2331884A1 (fr) * 1975-11-11 1977-06-10 Philips Nv Procede pour fabriquer un dispositif semi-conducteur, et dispositif fabrique de la sorte
FR2468208A1 (fr) * 1979-10-18 1981-04-30 Philips Nv Dispositif semiconducteur avec une diode zener
FR2488734A1 (fr) * 1980-08-18 1982-02-19 Philips Nv Diode zener et procede pour la fabriquer
FR2500855A1 (fr) * 1981-02-27 1982-09-03 Thomson Csf Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue
EP0082331A3 (en) * 1981-12-22 1986-06-04 International Business Machines Corporation Subsurface avalanche breakdown zener diode

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
JP2001352079A (ja) * 2000-06-07 2001-12-21 Nec Corp ダイオードおよびその製造方法
CN113206157A (zh) * 2021-04-30 2021-08-03 中国振华集团永光电子有限公司（国营第八七三厂） 体内击穿玻钝二极管及制造方法
CN114551567A (zh) * 2022-01-21 2022-05-27 吉林华微电子股份有限公司 一种齐纳二极管及齐纳二极管制作方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2331884A1 (fr) * 1975-11-11 1977-06-10 Philips Nv Procede pour fabriquer un dispositif semi-conducteur, et dispositif fabrique de la sorte
FR2468208A1 (fr) * 1979-10-18 1981-04-30 Philips Nv Dispositif semiconducteur avec une diode zener
FR2488734A1 (fr) * 1980-08-18 1982-02-19 Philips Nv Diode zener et procede pour la fabriquer
FR2500855A1 (fr) * 1981-02-27 1982-09-03 Thomson Csf Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue
EP0082331A3 (en) * 1981-12-22 1986-06-04 International Business Machines Corporation Subsurface avalanche breakdown zener diode

Also Published As

Publication number Publication date
DE2207654B2 (de) 1974-02-14
AU5200373A (en) 1974-08-08
FR2172191B1 (cs) 1978-04-14
DE2207654A1 (de) 1973-08-30
GB1364035A (en) 1974-08-21
IT979130B (it) 1974-09-30
AU463838B2 (en) 1975-08-07

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Legal Events

Date Code Title Description
ST Notification of lapse