FR2144539A1 - Field effect schottky diode - using mos ring structure around main ain contact - Google Patents

Field effect schottky diode - using mos ring structure around main ain contact

Info

Publication number
FR2144539A1
FR2144539A1 FR7124325A FR7124325A FR2144539A1 FR 2144539 A1 FR2144539 A1 FR 2144539A1 FR 7124325 A FR7124325 A FR 7124325A FR 7124325 A FR7124325 A FR 7124325A FR 2144539 A1 FR2144539 A1 FR 2144539A1
Authority
FR
France
Prior art keywords
ring structure
field effect
oxide layer
schottky diode
structure around
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7124325A
Other languages
English (en)
French (fr)
Other versions
FR2144539B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7124325A priority Critical patent/FR2144539A1/fr
Publication of FR2144539A1 publication Critical patent/FR2144539A1/fr
Application granted granted Critical
Publication of FR2144539B1 publication Critical patent/FR2144539B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
FR7124325A 1971-07-02 1971-07-02 Field effect schottky diode - using mos ring structure around main ain contact Granted FR2144539A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7124325A FR2144539A1 (en) 1971-07-02 1971-07-02 Field effect schottky diode - using mos ring structure around main ain contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7124325A FR2144539A1 (en) 1971-07-02 1971-07-02 Field effect schottky diode - using mos ring structure around main ain contact

Publications (2)

Publication Number Publication Date
FR2144539A1 true FR2144539A1 (en) 1973-02-16
FR2144539B1 FR2144539B1 (enExample) 1974-09-06

Family

ID=9079755

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7124325A Granted FR2144539A1 (en) 1971-07-02 1971-07-02 Field effect schottky diode - using mos ring structure around main ain contact

Country Status (1)

Country Link
FR (1) FR2144539A1 (enExample)

Also Published As

Publication number Publication date
FR2144539B1 (enExample) 1974-09-06

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Legal Events

Date Code Title Description
ST Notification of lapse