FR2125541A1 - - Google Patents

Info

Publication number
FR2125541A1
FR2125541A1 FR7205306A FR7205306A FR2125541A1 FR 2125541 A1 FR2125541 A1 FR 2125541A1 FR 7205306 A FR7205306 A FR 7205306A FR 7205306 A FR7205306 A FR 7205306A FR 2125541 A1 FR2125541 A1 FR 2125541A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7205306A
Other languages
French (fr)
Other versions
FR2125541B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2125541A1 publication Critical patent/FR2125541A1/fr
Application granted granted Critical
Publication of FR2125541B1 publication Critical patent/FR2125541B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
FR7205306A 1971-02-17 1972-02-17 Expired FR2125541B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11612571A 1971-02-17 1971-02-17

Publications (2)

Publication Number Publication Date
FR2125541A1 true FR2125541A1 (enExample) 1972-09-29
FR2125541B1 FR2125541B1 (enExample) 1975-03-21

Family

ID=22365400

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7205306A Expired FR2125541B1 (enExample) 1971-02-17 1972-02-17

Country Status (6)

Country Link
US (1) US3715245A (enExample)
BE (1) BE779483A (enExample)
DE (1) DE2207056A1 (enExample)
FR (1) FR2125541B1 (enExample)
GB (1) GB1355580A (enExample)
IT (1) IT947435B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371776A1 (fr) * 1976-11-22 1978-06-16 Ibm Structure semi-conductrice a heterojonctions

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1365465A (en) * 1973-02-06 1974-09-04 Standard Telephones Cables Ltd Semiconductor device manufacture
US3891478A (en) * 1973-08-16 1975-06-24 Rca Corp Deposition of epitaxial layer from the liquid phase
CA1019827A (en) * 1973-10-26 1977-10-25 Tatsuro Beppu Method of manufacturing a gallium phosphide light-emitting device
US3976872A (en) * 1973-11-29 1976-08-24 Honeywell Inc. Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV
US4180423A (en) * 1974-01-31 1979-12-25 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing red light-emitting gallium phosphide device
JPS512393A (enExample) * 1974-06-24 1976-01-09 Hitachi Ltd
US4032370A (en) * 1976-02-11 1977-06-28 International Audio Visual, Inc. Method of forming an epitaxial layer on a crystalline substrate
JPS52126699A (en) * 1976-04-16 1977-10-24 Agency Of Ind Science & Technol Process for liquid phase epitaxial growth
JPS55163835A (en) * 1979-06-06 1980-12-20 Toshiba Corp Selective liquid phase growth of on semiconductor region
US4938166A (en) * 1986-03-31 1990-07-03 Hughes Aircraft Company Device for growing multi-layer crystals employing set of masking elements with different aperature configurations
DE4102136C1 (enExample) * 1991-01-25 1992-05-14 Werner Prof. Dr.Rer.Nat. 3007 Gehrden De Urland
JPH08225968A (ja) * 1995-02-01 1996-09-03 Hewlett Packard Co <Hp> 多成分系固体材料のエッチング方法
JP3015822B2 (ja) * 1998-03-06 2000-03-06 工業技術院長 固体選択成長用マスク及びその製造方法
JPH11289023A (ja) * 1998-04-02 1999-10-19 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US11220758B2 (en) * 2016-06-15 2022-01-11 Seoul Viosys Co., Ltd. Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
NL294124A (enExample) * 1962-06-18
US3773571A (en) * 1967-06-15 1973-11-20 Ibm Preparation of semiconductor ternary compounds of controlled composition by predetermined cooling rates
US3585087A (en) * 1967-11-22 1971-06-15 Ibm Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
US3535772A (en) * 1968-03-25 1970-10-27 Bell Telephone Labor Inc Semiconductor device fabrication processes
US3619304A (en) * 1968-08-30 1971-11-09 Tokyo Shibaura Electric Co Method of manufacturing gallium phosphide electro luminescent diodes
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371776A1 (fr) * 1976-11-22 1978-06-16 Ibm Structure semi-conductrice a heterojonctions

Also Published As

Publication number Publication date
US3715245A (en) 1973-02-06
FR2125541B1 (enExample) 1975-03-21
DE2207056A1 (de) 1972-08-24
IT947435B (it) 1973-05-21
GB1355580A (en) 1974-06-05
BE779483A (fr) 1972-08-17

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Legal Events

Date Code Title Description
ST Notification of lapse