FR2123241A1 - - Google Patents

Info

Publication number
FR2123241A1
FR2123241A1 FR7121311A FR7121311A FR2123241A1 FR 2123241 A1 FR2123241 A1 FR 2123241A1 FR 7121311 A FR7121311 A FR 7121311A FR 7121311 A FR7121311 A FR 7121311A FR 2123241 A1 FR2123241 A1 FR 2123241A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7121311A
Other versions
FR2123241B1 (fr
Inventor
Bentchkowsky D Frohman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2123241A1 publication Critical patent/FR2123241A1/fr
Application granted granted Critical
Publication of FR2123241B1 publication Critical patent/FR2123241B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR7121311A 1970-06-15 1971-06-11 Expired FR2123241B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4614870A 1970-06-15 1970-06-15
US10664271A 1971-01-15 1971-01-15

Publications (2)

Publication Number Publication Date
FR2123241A1 true FR2123241A1 (fr) 1972-09-08
FR2123241B1 FR2123241B1 (fr) 1976-02-06

Family

ID=26723617

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7121311A Expired FR2123241B1 (fr) 1970-06-15 1971-06-11

Country Status (6)

Country Link
US (1) US3755721A (fr)
JP (1) JPS5131073B1 (fr)
CA (1) CA950128A (fr)
FR (1) FR2123241B1 (fr)
GB (1) GB1357444A (fr)
NL (1) NL154364B (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525233B2 (fr) * 1972-02-29 1977-02-10
NL7208026A (fr) * 1972-06-13 1973-12-17
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
JPS5024084A (fr) * 1973-07-05 1975-03-14
JPS532552B2 (fr) * 1974-03-30 1978-01-28
JPS5513433B2 (fr) * 1974-08-29 1980-04-09
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
US4119995A (en) * 1976-08-23 1978-10-10 Intel Corporation Electrically programmable and electrically erasable MOS memory cell
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
US4357571A (en) * 1978-09-29 1982-11-02 Siemens Aktiengesellschaft FET Module with reference source chargeable memory gate
US4247861A (en) * 1979-03-09 1981-01-27 Rca Corporation High performance electrically alterable read-only memory (EAROM)
EP0021777B1 (fr) * 1979-06-18 1983-10-19 Fujitsu Limited Dispositif semi-conducteur de mémoire non volatile
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
US4363109A (en) * 1980-11-28 1982-12-07 General Motors Corporation Capacitance coupled eeprom
JPS61199833U (fr) * 1985-06-04 1986-12-13
GB2284031B (en) * 1987-11-27 1995-11-08 Gen Electric Composite fastener
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5295113A (en) * 1991-05-09 1994-03-15 Intel Corporation Flash memory source inhibit generator
ATE238610T1 (de) * 1994-03-03 2003-05-15 Rohm Corp Niederspannungs-eintransistor-flash-eeprom-zell mit fowler-nordheim programmier- und löschung
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
KR100241524B1 (ko) * 1996-12-28 2000-02-01 김영환 플래쉬 메모리 셀
US6518618B1 (en) 1999-12-03 2003-02-11 Intel Corporation Integrated memory cell and method of fabrication
US6829814B1 (en) * 2002-08-29 2004-12-14 Delphi Technologies, Inc. Process of making an all-silicon microphone

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
FR1559352A (fr) * 1967-03-27 1969-03-07
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3060327A (en) * 1959-07-02 1962-10-23 Bell Telephone Labor Inc Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3339086A (en) * 1964-06-11 1967-08-29 Itt Surface controlled avalanche transistor
US3401319A (en) * 1966-03-08 1968-09-10 Gen Micro Electronics Inc Integrated latch circuit
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
US3577210A (en) * 1969-02-17 1971-05-04 Hughes Aircraft Co Solid-state storage device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
FR1559352A (fr) * 1967-03-27 1969-03-07
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"ELECTRONICS"VOLUME 44,10 MAI 1971,PAGES 91-95:"ROM CAN BE ELECTRICALLY PROGRAMMED AND REPROGRAMMED AND REPROGRAMMED D.F.BENTCHKOWSKY *
CHARGE STORAGE EFFECT"H.G.DILL ET AL.) *
PROGRAMMED AND REPROGRAMMED AND REPROGRAMMED D.F.BENTCHKOWSKY *
REVUE AMERICAINE"ELECTRONICS"VOLUME 44,10 MAI 1971,PAGES 91-95:"ROM CAN BE ELECTRICALLY *
REVUE INTERNATIONALE"SOLIDSTATE ELECTRONICS"VOLUME 12,DECEMBRE 1969 PAGES 981-987"A NEW MNOS *
REVUE INTERNATIONALE"SOLIDSTATE ELECTRONICS"VOLUME 12,DECEMBRE 1969 PAGES 981-987"A NEW MNOS CHARGE STORAGE EFFECT"H.G.DILL ET AL.) *

Also Published As

Publication number Publication date
JPS5131073B1 (fr) 1976-09-04
NL7108097A (fr) 1971-12-17
DE2129181A1 (de) 1971-12-23
FR2123241B1 (fr) 1976-02-06
DE2129181B2 (de) 1977-05-12
CA950128A (en) 1974-06-25
NL154364B (nl) 1977-08-15
US3755721A (en) 1973-08-28
GB1357444A (en) 1974-06-19

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Legal Events

Date Code Title Description
ST Notification of lapse