FR2115162A1 - - Google Patents

Info

Publication number
FR2115162A1
FR2115162A1 FR7137572A FR7137572A FR2115162A1 FR 2115162 A1 FR2115162 A1 FR 2115162A1 FR 7137572 A FR7137572 A FR 7137572A FR 7137572 A FR7137572 A FR 7137572A FR 2115162 A1 FR2115162 A1 FR 2115162A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7137572A
Other languages
French (fr)
Other versions
FR2115162B1 (instruction
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2115162A1 publication Critical patent/FR2115162A1/fr
Application granted granted Critical
Publication of FR2115162B1 publication Critical patent/FR2115162B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
FR7137572A 1970-11-27 1971-10-12 Expired FR2115162B1 (instruction)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9296170A 1970-11-27 1970-11-27
US9296070A 1970-11-27 1970-11-27

Publications (2)

Publication Number Publication Date
FR2115162A1 true FR2115162A1 (instruction) 1972-07-07
FR2115162B1 FR2115162B1 (instruction) 1974-05-31

Family

ID=26786240

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7137573A Expired FR2115163B1 (instruction) 1970-11-27 1971-10-12
FR7137572A Expired FR2115162B1 (instruction) 1970-11-27 1971-10-12

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7137573A Expired FR2115163B1 (instruction) 1970-11-27 1971-10-12

Country Status (8)

Country Link
US (2) US3729719A (instruction)
AU (1) AU451906B2 (instruction)
CA (2) CA948328A (instruction)
CH (1) CH531772A (instruction)
DE (1) DE2156805C3 (instruction)
FR (2) FR2115163B1 (instruction)
GB (1) GB1336482A (instruction)
NL (1) NL179425C (instruction)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204849A1 (instruction) * 1972-11-01 1974-05-24 Ibm

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919569A (en) * 1972-12-29 1975-11-11 Ibm Dynamic two device memory cell which provides D.C. sense signals
JPS5017180A (instruction) * 1973-06-13 1975-02-22
US3893146A (en) * 1973-12-26 1975-07-01 Teletype Corp Semiconductor capacitor structure and memory cell, and method of making
US3918033A (en) * 1974-11-11 1975-11-04 Ibm SCR memory cell
US4084174A (en) * 1976-02-12 1978-04-11 Fairchild Camera And Instrument Corporation Graduated multiple collector structure for inverted vertical bipolar transistors
US4090254A (en) * 1976-03-01 1978-05-16 International Business Machines Corporation Charge injector transistor memory
FR2365858A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile de longue duree pour signaux rapides
FR2365859A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile pour signaux rapides
US4125855A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated semiconductor crosspoint arrangement
US4181981A (en) * 1977-12-30 1980-01-01 International Business Machines Corporation Bipolar two device dynamic memory cell
JPS55145363A (en) * 1979-04-27 1980-11-12 Toshiba Corp Semiconductor device
US4476623A (en) * 1979-10-22 1984-10-16 International Business Machines Corporation Method of fabricating a bipolar dynamic memory cell
US4309716A (en) * 1979-10-22 1982-01-05 International Business Machines Corporation Bipolar dynamic memory cell
US4409673A (en) * 1980-12-31 1983-10-11 Ibm Corporation Single isolation cell for DC stable memory
US4882706A (en) * 1985-06-07 1989-11-21 Anamartic Limited Data storage element and memory structures employing same
TW223172B (en) * 1992-12-22 1994-05-01 Siemens Ag Siganl sensing circuits for memory system using dynamic gain memory cells
US5793668A (en) * 1997-06-06 1998-08-11 Timeplex, Inc. Method and apparatus for using parasitic capacitances of a printed circuit board as a temporary data storage medium working with a remote device
US6128216A (en) * 1998-05-13 2000-10-03 Micron Technology Inc. High density planar SRAM cell with merged transistors
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB771625A (en) * 1953-12-31 1957-04-03 Ibm Electric charge storage apparatus
NL294168A (instruction) * 1963-06-17
US3388292A (en) * 1966-02-15 1968-06-11 Rca Corp Insulated gate field-effect transistor means for information gating and driving of solid state display panels
US3475735A (en) * 1967-05-09 1969-10-28 Honeywell Inc Semiconductor memory
US3518635A (en) * 1967-08-22 1970-06-30 Bunker Ramo Digital memory apparatus
US3513365A (en) * 1968-06-24 1970-05-19 Mark W Levi Field-effect integrated circuit and method of fabrication
US3599180A (en) * 1968-11-29 1971-08-10 Gen Instrument Corp Random access read-write memory system having data refreshing capabilities and memory cell therefor
US3576571A (en) * 1969-01-07 1971-04-27 North American Rockwell Memory circuit using storage capacitance and field effect devices
US3581292A (en) * 1969-01-07 1971-05-25 North American Rockwell Read/write memory circuit
US3582909A (en) * 1969-03-07 1971-06-01 North American Rockwell Ratioless memory circuit using conditionally switched capacitor
US3593037A (en) * 1970-03-13 1971-07-13 Intel Corp Cell for mos random-acess integrated circuit memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE "IBM TECHNICAL DISCLOSURE BELLETIN", VOLUME 13, NO.1, JUIN 1970, PAGES 84-85:"MEMORY WITH COMBINED READ-WRITE OPERATION" D.TAYLOR *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204849A1 (instruction) * 1972-11-01 1974-05-24 Ibm

Also Published As

Publication number Publication date
FR2115163A1 (instruction) 1972-07-07
FR2115163B1 (instruction) 1974-05-31
GB1336482A (en) 1973-11-07
NL179425B (nl) 1986-04-01
DE2156805A1 (de) 1972-06-22
US3729719A (en) 1973-04-24
DE2156805B2 (de) 1976-10-21
AU451906B2 (en) 1974-08-22
FR2115162B1 (instruction) 1974-05-31
DE2155228A1 (de) 1972-06-08
CA954220A (en) 1974-09-03
DE2155228B2 (de) 1976-10-14
US3697962A (en) 1972-10-10
CH531772A (de) 1972-12-15
CA948328A (en) 1974-05-28
NL179425C (nl) 1986-09-01
AU3515271A (en) 1973-05-03
NL7116191A (instruction) 1972-05-30
DE2156805C3 (de) 1985-02-07

Similar Documents

Publication Publication Date Title
AR204384A1 (instruction)
FR2115163B1 (instruction)
ATA96471A (instruction)
AU2044470A (instruction)
AU1146470A (instruction)
AU1473870A (instruction)
AU2085370A (instruction)
AU1326870A (instruction)
AU1833270A (instruction)
AU1716970A (instruction)
AU2017870A (instruction)
AU1517670A (instruction)
AU2130570A (instruction)
AU1336970A (instruction)
AU1591370A (instruction)
AU1841070A (instruction)
AU2144270A (instruction)
AU1328670A (instruction)
AU2131570A (instruction)
AU1343870A (instruction)
AU1247570A (instruction)
AU2130770A (instruction)
AU1235770A (instruction)
AU1581370A (instruction)
AU1189670A (instruction)

Legal Events

Date Code Title Description
ST Notification of lapse