FR2108122B1 - - Google Patents
Info
- Publication number
- FR2108122B1 FR2108122B1 FR7135311A FR7135311A FR2108122B1 FR 2108122 B1 FR2108122 B1 FR 2108122B1 FR 7135311 A FR7135311 A FR 7135311A FR 7135311 A FR7135311 A FR 7135311A FR 2108122 B1 FR2108122 B1 FR 2108122B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P14/69433—
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- H10P14/6334—
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- H10P14/6504—
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- H10P14/6512—
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- H10P14/662—
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- H10P14/6682—
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- H10P14/69215—
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- H10W74/40—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702047998 DE2047998A1 (de) | 1970-09-30 | 1970-09-30 | Verfahren zum Herstellen einer Planaranordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2108122A1 FR2108122A1 (enExample) | 1972-05-12 |
| FR2108122B1 true FR2108122B1 (enExample) | 1974-06-07 |
Family
ID=5783765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7135311A Expired FR2108122B1 (enExample) | 1970-09-30 | 1971-09-30 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3798062A (enExample) |
| AU (1) | AU454548B2 (enExample) |
| DE (1) | DE2047998A1 (enExample) |
| FR (1) | FR2108122B1 (enExample) |
| GB (1) | GB1339293A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5635024B2 (enExample) * | 1973-12-14 | 1981-08-14 | ||
| JPS5922381B2 (ja) * | 1975-12-03 | 1984-05-26 | 株式会社東芝 | ハンドウタイソシノ セイゾウホウホウ |
| DE2836911C2 (de) * | 1978-08-23 | 1986-11-06 | Siemens AG, 1000 Berlin und 8000 München | Passivierungsschicht für Halbleiterbauelemente |
| FR3125770B1 (fr) | 2021-07-27 | 2023-10-06 | Psa Automobiles Sa | Procédé d’ouverture d’un véhicule et clef mains libres associée. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
| US3503813A (en) * | 1965-12-15 | 1970-03-31 | Hitachi Ltd | Method of making a semiconductor device |
| US3438873A (en) * | 1966-05-11 | 1969-04-15 | Bell Telephone Labor Inc | Anodic treatment to alter solubility of dielectric films |
| US3455020A (en) * | 1966-10-13 | 1969-07-15 | Rca Corp | Method of fabricating insulated-gate field-effect devices |
| NL162250C (nl) * | 1967-11-21 | 1980-04-15 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen. |
| US3607697A (en) * | 1968-04-18 | 1971-09-21 | Sprague Electric Co | Sputtering process for making a film of silica and silicon nitride |
| US3658678A (en) * | 1969-11-26 | 1972-04-25 | Ibm | Glass-annealing process for encapsulating and stabilizing fet devices |
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1970
- 1970-09-30 DE DE19702047998 patent/DE2047998A1/de active Pending
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1971
- 1971-09-10 GB GB4239471A patent/GB1339293A/en not_active Expired
- 1971-09-14 AU AU33430/71A patent/AU454548B2/en not_active Expired
- 1971-09-27 US US00184176A patent/US3798062A/en not_active Expired - Lifetime
- 1971-09-30 FR FR7135311A patent/FR2108122B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2047998A1 (de) | 1972-04-06 |
| AU3343071A (en) | 1973-03-22 |
| US3798062A (en) | 1974-03-19 |
| GB1339293A (en) | 1973-11-28 |
| FR2108122A1 (enExample) | 1972-05-12 |
| AU454548B2 (en) | 1974-10-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |