FR2099910A5 - Double layer resist - for diffusing aluminium and gallium into silicon semiconductors - Google Patents

Double layer resist - for diffusing aluminium and gallium into silicon semiconductors

Info

Publication number
FR2099910A5
FR2099910A5 FR7123122A FR7123122A FR2099910A5 FR 2099910 A5 FR2099910 A5 FR 2099910A5 FR 7123122 A FR7123122 A FR 7123122A FR 7123122 A FR7123122 A FR 7123122A FR 2099910 A5 FR2099910 A5 FR 2099910A5
Authority
FR
France
Prior art keywords
gallium
double layer
layer resist
silicon semiconductors
diffusing aluminium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7123122A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of FR2099910A5 publication Critical patent/FR2099910A5/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T24/00Buckles, buttons, clasps, etc.
    • Y10T24/23Bedclothes holders
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T24/00Buckles, buttons, clasps, etc.
    • Y10T24/44Clasp, clip, support-clamp, or required component thereof
    • Y10T24/44641Clasp, clip, support-clamp, or required component thereof having gripping member formed from, biased by, or mounted on resilient member
    • Y10T24/44744Clasp, clip, support-clamp, or required component thereof having gripping member formed from, biased by, or mounted on resilient member with position locking-means for engaging faces
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T24/00Buckles, buttons, clasps, etc.
    • Y10T24/44Clasp, clip, support-clamp, or required component thereof
    • Y10T24/44641Clasp, clip, support-clamp, or required component thereof having gripping member formed from, biased by, or mounted on resilient member
    • Y10T24/44769Opposed engaging faces on gripping member formed from single piece of resilient material
    • Y10T24/44872Opposed engaging faces on gripping member formed from single piece of resilient material having specific handle structure

Abstract

The resist comprises a SiO2 layer 500-5000 angstroms thick covered by an alumina layer 2000-5000 angstroms thick. The alumina prevents undesired diffusion of Al and Ga into the semiconductive Si slice during doping processes.
FR7123122A 1970-06-24 1971-06-24 Double layer resist - for diffusing aluminium and gallium into silicon semiconductors Expired FR2099910A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4937770A 1970-06-24 1970-06-24

Publications (1)

Publication Number Publication Date
FR2099910A5 true FR2099910A5 (en) 1972-03-17

Family

ID=21959497

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123122A Expired FR2099910A5 (en) 1970-06-24 1971-06-24 Double layer resist - for diffusing aluminium and gallium into silicon semiconductors

Country Status (4)

Country Link
BE (1) BE768965A (en)
DE (2) DE7124154U (en)
FR (1) FR2099910A5 (en)
NL (1) NL7108668A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322712B1 (en) 1999-09-01 2001-11-27 Micron Technology, Inc. Buffer layer in flat panel display

Also Published As

Publication number Publication date
DE7124154U (en) 1971-11-11
BE768965A (en) 1971-12-24
DE2131143A1 (en) 1972-02-10
NL7108668A (en) 1971-12-28

Similar Documents

Publication Publication Date Title
GB1488307A (en) Semiconductor structure and method for making same
CA971205A (en) Quick service valve device
ES417610A1 (en) Semiconductor device and method of manufacturing same
CA918308A (en) Method and device for the deposition of doped semiconductors
CA961422A (en) Elevator installation with sealed passenger passageway
FR2099910A5 (en) Double layer resist - for diffusing aluminium and gallium into silicon semiconductors
GB1473400A (en) Method for diffusing impurities into nitride semiconductor crystals
SE7709678L (en) WAY TO MANUFACTURE A SEMICONDUCTOR DEVICE
CA921178A (en) Isolation diffusion method for making reduced beta transistor diodes
AU4195572A (en) Insulated gate semiconductor device
CA868641A (en) Method for etching silicon nitride films with sharp edge definition
CA1015021A (en) Semiconductor cold electron emission device
CA982783A (en) Finely particulated colloidal platinum, compound and sol for producing the same, and method of preparation
CA966040A (en) Method of forming an epitaxial semiconductor layer with smooth surface
JPS5329072A (en) Gallium arsenide semiconductor device
GB1362512A (en) Semiconductor device and method for manufacture
JPS5257783A (en) Semiconductor wafer
JPS5326683A (en) Manufacture of semiconductor devic e
CA954426A (en) Chemical growth of insulating layers on gallium arsenide
CA949800A (en) Pattern silicon nitride masking layers
JPS526080A (en) Production method of semiconductor wafer
AU446502B2 (en) Solution epitaxy technique for the fabrication of multilayered semiconductive structures having alternate narrow and wide band ga layers
CA855877A (en) Supervisory device for rectifier having semiconductor valve type components
IT958999B (en) PROCEDURE AND DEVICE FOR SEPA RARE BEER MUST FROM MISCE LA
JPS5227354A (en) Impurity diffusion method for iii-v group compound semiconductor region

Legal Events

Date Code Title Description
ST Notification of lapse