FR2084643A5 - - Google Patents

Info

Publication number
FR2084643A5
FR2084643A5 FR7109005A FR7109005A FR2084643A5 FR 2084643 A5 FR2084643 A5 FR 2084643A5 FR 7109005 A FR7109005 A FR 7109005A FR 7109005 A FR7109005 A FR 7109005A FR 2084643 A5 FR2084643 A5 FR 2084643A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7109005A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR2084643A5 publication Critical patent/FR2084643A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7109005A 1970-03-16 1971-03-15 Expired FR2084643A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1992970A 1970-03-16 1970-03-16

Publications (1)

Publication Number Publication Date
FR2084643A5 true FR2084643A5 (de) 1971-12-17

Family

ID=21795814

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7109005A Expired FR2084643A5 (de) 1970-03-16 1971-03-15

Country Status (8)

Country Link
US (1) US3648654A (de)
JP (1) JPS528796B1 (de)
BE (1) BE764314A (de)
DE (1) DE2111946C3 (de)
FR (1) FR2084643A5 (de)
GB (1) GB1315298A (de)
NL (1) NL144496B (de)
SE (1) SE377054B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0088579A1 (de) * 1982-03-01 1983-09-14 Zaidan Hojin Handotai Kenkyu Shinkokai Vorrichtung zum Ausführen eines Flüssigphasenwachstums unter Anwendung der Temperaturdifferenz-Technik

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036317A1 (de) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und vorrichtung zur fluessigphasenepitaxie
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
WO2007122865A1 (ja) * 2006-03-24 2007-11-01 Ngk Insulators, Ltd. 窒化物単結晶の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1422545A (en) * 1920-06-01 1922-07-11 Ernest L Dayton Coating apparatus
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
BE624740A (de) * 1961-11-15
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
US3382843A (en) * 1965-10-23 1968-05-14 Optical Coating Laboratory Inc Vacuum coating apparatus utilizing rotating sources
US3524426A (en) * 1968-02-29 1970-08-18 Libbey Owens Ford Glass Co Apparatus for coating by thermal evaporation
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0088579A1 (de) * 1982-03-01 1983-09-14 Zaidan Hojin Handotai Kenkyu Shinkokai Vorrichtung zum Ausführen eines Flüssigphasenwachstums unter Anwendung der Temperaturdifferenz-Technik

Also Published As

Publication number Publication date
US3648654A (en) 1972-03-14
DE2111946C3 (de) 1974-03-07
NL144496B (nl) 1975-01-15
JPS528796B1 (de) 1977-03-11
SE377054B (de) 1975-06-23
DE2111946A1 (de) 1971-09-30
DE2111946B2 (de) 1973-08-02
NL7103418A (de) 1971-09-20
BE764314A (fr) 1971-09-16
GB1315298A (en) 1973-05-02

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Legal Events

Date Code Title Description
ST Notification of lapse