FR2080967A1 - Diffusion-doped semiconductors - Google Patents
Diffusion-doped semiconductorsInfo
- Publication number
- FR2080967A1 FR2080967A1 FR7103654A FR7103654A FR2080967A1 FR 2080967 A1 FR2080967 A1 FR 2080967A1 FR 7103654 A FR7103654 A FR 7103654A FR 7103654 A FR7103654 A FR 7103654A FR 2080967 A1 FR2080967 A1 FR 2080967A1
- Authority
- FR
- France
- Prior art keywords
- diffusion
- temp
- doped semiconductors
- working
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US975470A | 1970-02-09 | 1970-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2080967A1 true FR2080967A1 (en) | 1971-11-26 |
FR2080967B1 FR2080967B1 (enrdf_load_stackoverflow) | 1976-05-28 |
Family
ID=21739503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7103654A Granted FR2080967A1 (en) | 1970-02-09 | 1971-01-27 | Diffusion-doped semiconductors |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS4840298B1 (enrdf_load_stackoverflow) |
DE (1) | DE2102865A1 (enrdf_load_stackoverflow) |
FR (1) | FR2080967A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51126096U (enrdf_load_stackoverflow) * | 1975-04-07 | 1976-10-12 | ||
JPS6086325U (ja) * | 1983-11-22 | 1985-06-14 | ピジヨン株式会社 | 差込み便器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1377877A (fr) * | 1962-12-20 | 1964-11-06 | Westinghouse Electric Corp | Dispositif de commutation à semi-conducteur |
FR1551367A (enrdf_load_stackoverflow) * | 1966-12-30 | 1968-12-27 |
-
1970
- 1970-12-24 JP JP45116929A patent/JPS4840298B1/ja active Pending
-
1971
- 1971-01-22 DE DE19712102865 patent/DE2102865A1/de active Pending
- 1971-01-27 FR FR7103654A patent/FR2080967A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1377877A (fr) * | 1962-12-20 | 1964-11-06 | Westinghouse Electric Corp | Dispositif de commutation à semi-conducteur |
FR1551367A (enrdf_load_stackoverflow) * | 1966-12-30 | 1968-12-27 |
Non-Patent Citations (6)
Title |
---|
(REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS"VOLUME 10,AOUT 1967,"GLEICHZEITIGE DIFFUSION VON GA UND AS IN SILIZIUM AUS EINER CAAS-QUELLE"W.MONCH,PAGES 745-751. * |
*REVUE JAPONAISE"SUPPLEMENT TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS"VOLUME 39,1970) * |
GA UND AS IN SILIZIUM AUS EINER CAAS-QUELLE"W.MONCH,PAGES 745-751. * |
REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS"VOLUME 10,AOUT 1967,"GLEICHZEITIGE DIFFUSION VON * |
REVUE JAPONAISE"SUPPLEMENT * |
TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS"VOLUME 39,1970) * |
Also Published As
Publication number | Publication date |
---|---|
JPS4840298B1 (enrdf_load_stackoverflow) | 1973-11-29 |
DE2102865A1 (de) | 1971-08-26 |
FR2080967B1 (enrdf_load_stackoverflow) | 1976-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |