FR2069256A5 - - Google Patents

Info

Publication number
FR2069256A5
FR2069256A5 FR7040437A FR7040437A FR2069256A5 FR 2069256 A5 FR2069256 A5 FR 2069256A5 FR 7040437 A FR7040437 A FR 7040437A FR 7040437 A FR7040437 A FR 7040437A FR 2069256 A5 FR2069256 A5 FR 2069256A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7040437A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR2069256A5 publication Critical patent/FR2069256A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/099—LED, multicolor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/956—Making multiple wavelength emissive device
FR7040437A 1969-11-12 1970-11-10 Expired FR2069256A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87591769A 1969-11-12 1969-11-12

Publications (1)

Publication Number Publication Date
FR2069256A5 true FR2069256A5 (fr) 1971-09-03

Family

ID=25366606

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7040437A Expired FR2069256A5 (fr) 1969-11-12 1970-11-10

Country Status (4)

Country Link
US (1) US3611069A (fr)
DE (1) DE2053849C3 (fr)
FR (1) FR2069256A5 (fr)
GB (1) GB1316475A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002491A1 (fr) * 1984-10-09 1986-04-24 American Telephone & Telegraph Company Dispositifs emetteurs de lumiere a longueurs d'ondes multiples
EP0717452A2 (fr) * 1994-12-12 1996-06-19 Motorola, Inc. Diodes émettrices de lumière multi-longueurs d'onde et méthodes de fabrication

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715245A (en) * 1971-02-17 1973-02-06 Gen Electric Selective liquid phase epitaxial growth process
US3791887A (en) * 1971-06-28 1974-02-12 Gte Laboratories Inc Liquid-phase epitaxial growth under transient thermal conditions
US3740570A (en) * 1971-09-27 1973-06-19 Litton Systems Inc Driving circuits for light emitting diodes
US4012243A (en) * 1971-11-12 1977-03-15 Motorola, Inc. Method of fabricating multicolor light displays utilizing etch and refill techniques
US3890170A (en) * 1972-02-29 1975-06-17 Motorola Inc Method of making a multicolor light display by graded mesaing
JPS5124860Y2 (fr) * 1972-03-09 1976-06-25
US3727115A (en) * 1972-03-24 1973-04-10 Ibm Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous
JPS48102585A (fr) * 1972-04-04 1973-12-22
US3806774A (en) * 1972-07-10 1974-04-23 Bell Telephone Labor Inc Bistable light emitting devices
US3783353A (en) * 1972-10-27 1974-01-01 Rca Corp Electroluminescent semiconductor device capable of emitting light of three different wavelengths
US4001056A (en) * 1972-12-08 1977-01-04 Monsanto Company Epitaxial deposition of iii-v compounds containing isoelectronic impurities
US3942185A (en) * 1972-12-13 1976-03-02 U.S. Philips Corporation Polychromatic electroluminescent device
US3911431A (en) * 1973-01-22 1975-10-07 Tokyo Shibaura Electric Co Light-emitting display device
US3951699A (en) * 1973-02-22 1976-04-20 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a gallium phosphide red-emitting device
US3868503A (en) * 1973-04-26 1975-02-25 Us Navy Monochromatic detector
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
US3902924A (en) * 1973-08-30 1975-09-02 Honeywell Inc Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
JPS5057593A (fr) * 1973-09-20 1975-05-20
US3873979A (en) * 1973-09-28 1975-03-25 Monsanto Co Luminescent solid state status indicator
JPS50130271U (fr) * 1974-04-09 1975-10-25
JPS50151484A (fr) * 1974-05-27 1975-12-05
JPS50151485A (fr) * 1974-05-27 1975-12-05
JPS5145369U (fr) * 1974-09-30 1976-04-03
US3942065A (en) * 1974-11-11 1976-03-02 Motorola, Inc. Monolithic, milticolor, light emitting diode display device
JPS5157173A (fr) * 1974-11-14 1976-05-19 Oki Electric Ind Co Ltd
JPS51105281A (fr) * 1975-03-13 1976-09-17 Mitsubishi Electric Corp
FR2317774A1 (fr) * 1975-07-08 1977-02-04 Radiotechnique Compelec Ensemble monolithique semiconducteur polychrome
US4198251A (en) * 1975-09-18 1980-04-15 U.S. Philips Corporation Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers
JPS5740529Y2 (fr) * 1977-01-20 1982-09-06
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
US4148045A (en) * 1977-09-21 1979-04-03 International Business Machines Corporation Multicolor light emitting diode array
JPS543662Y2 (fr) * 1977-10-20 1979-02-20
JPS5783082A (en) * 1980-11-11 1982-05-24 Nippon Telegr & Teleph Corp <Ntt> Two wave length semiconductor laser device
JPS57117667U (fr) * 1981-12-17 1982-07-21
US4577207A (en) * 1982-12-30 1986-03-18 At&T Bell Laboratories Dual wavelength optical source
DE3842394A1 (de) * 1988-12-16 1990-06-21 Total En Dev & Messerschmitt B Mehrschichtige fluoreszenzvorrichtung
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
US5707891A (en) * 1989-04-28 1998-01-13 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode
GB2252871B (en) * 1991-02-16 1994-11-02 Robin Mukerjee Wide surface LED
US5365084A (en) * 1991-02-20 1994-11-15 Pressco Technology, Inc. Video inspection system employing multiple spectrum LED illumination
US5166761A (en) * 1991-04-01 1992-11-24 Midwest Research Institute Tunnel junction multiple wavelength light-emitting diodes
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US6358631B1 (en) 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
US6548956B2 (en) 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) * 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US5613751A (en) 1995-06-27 1997-03-25 Lumitex, Inc. Light emitting panel assemblies
US6712481B2 (en) * 1995-06-27 2004-03-30 Solid State Opto Limited Light emitting panel assemblies
WO1997023912A2 (fr) * 1995-12-21 1997-07-03 Philips Electronics N.V. Del multicolores, leur procede de fabrication et affichage incorporant un groupement de telles del
AU4557300A (en) * 1999-04-27 2000-11-10 Karandashov, Sergey Radiation source
US7494243B2 (en) * 2002-11-18 2009-02-24 Whitegate Partners, Llc Multi-color illumination display apparatus
JP2004309710A (ja) * 2003-04-04 2004-11-04 Stanley Electric Co Ltd 写真撮影用光源装置
KR20060024421A (ko) * 2003-06-30 2006-03-16 켄이치로 미야하라 박막 형성용 기판, 박막 기판, 및 발광소자
JP5306992B2 (ja) * 2006-04-25 2013-10-02 コーニンクレッカ フィリップス エヌ ヴェ 白色光を作る蛍光照明
KR20070117238A (ko) * 2006-06-08 2007-12-12 삼성전기주식회사 반도체 발광 트랜지스터
US8462292B2 (en) * 2008-07-31 2013-06-11 Rambus Delaware Llc Optically transmissive substrates and light emitting assemblies and methods of making same, and methods of displaying images using the optically transmissive substrates and light emitting assemblies
TW201011890A (en) * 2008-09-04 2010-03-16 Formosa Epitaxy Inc Alternating current light emitting device
CN103456873A (zh) * 2012-06-01 2013-12-18 李学旻 发光二极管元件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526801A (en) * 1964-08-07 1970-09-01 Honeywell Inc Radiation sensitive semiconductor device
GB1114768A (en) * 1965-01-18 1968-05-22 Mullard Ltd Improvements in and relating to semiconductor lamps
US3478214A (en) * 1966-02-16 1969-11-11 North American Rockwell Photodetector responsive to light intensity in different spectral bands

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002491A1 (fr) * 1984-10-09 1986-04-24 American Telephone & Telegraph Company Dispositifs emetteurs de lumiere a longueurs d'ondes multiples
EP0717452A2 (fr) * 1994-12-12 1996-06-19 Motorola, Inc. Diodes émettrices de lumière multi-longueurs d'onde et méthodes de fabrication
EP0717452A3 (fr) * 1994-12-12 1997-01-29 Motorola Inc Diodes émettrices de lumière multi-longueurs d'onde et méthodes de fabrication

Also Published As

Publication number Publication date
DE2053849C3 (de) 1975-04-30
DE2053849B2 (fr) 1974-09-19
GB1316475A (en) 1973-05-09
DE2053849A1 (de) 1971-07-08
US3611069A (en) 1971-10-05

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Legal Events

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ST Notification of lapse