FR2068673A1 - Semiconductor devices with low temp insulators of reduced porosity - Google Patents

Semiconductor devices with low temp insulators of reduced porosity

Info

Publication number
FR2068673A1
FR2068673A1 FR7042583A FR7042583A FR2068673A1 FR 2068673 A1 FR2068673 A1 FR 2068673A1 FR 7042583 A FR7042583 A FR 7042583A FR 7042583 A FR7042583 A FR 7042583A FR 2068673 A1 FR2068673 A1 FR 2068673A1
Authority
FR
France
Prior art keywords
semiconductor devices
insulators
sio2
low temp
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7042583A
Other languages
English (en)
French (fr)
Other versions
FR2068673B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9429169A external-priority patent/JPS4836599B1/ja
Priority claimed from JP9429269A external-priority patent/JPS556291B1/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2068673A1 publication Critical patent/FR2068673A1/fr
Application granted granted Critical
Publication of FR2068673B1 publication Critical patent/FR2068673B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10W74/01—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR7042583A 1969-11-26 1970-11-26 Semiconductor devices with low temp insulators of reduced porosity Granted FR2068673A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9429169A JPS4836599B1 (OSRAM) 1969-11-26 1969-11-26
JP9429269A JPS556291B1 (OSRAM) 1969-11-26 1969-11-26

Publications (2)

Publication Number Publication Date
FR2068673A1 true FR2068673A1 (en) 1971-08-27
FR2068673B1 FR2068673B1 (OSRAM) 1974-09-06

Family

ID=26435554

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7042583A Granted FR2068673A1 (en) 1969-11-26 1970-11-26 Semiconductor devices with low temp insulators of reduced porosity

Country Status (3)

Country Link
DE (1) DE2058059A1 (OSRAM)
FR (1) FR2068673A1 (OSRAM)
NL (1) NL7017242A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572704A1 (en) * 1992-06-05 1993-12-08 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
EP0475265A3 (en) * 1990-09-12 1994-05-25 Hitachi Ltd Insulator for solid state device and its fabrication method
EP0653782A3 (en) * 1993-11-10 1996-04-24 Canon Sales Co Inc Process for reforming an insulating layer.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1511986A (fr) * 1966-02-24 1968-02-02 Rca Corp Circuits intégrés à semi-conducteurs

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1511986A (fr) * 1966-02-24 1968-02-02 Rca Corp Circuits intégrés à semi-conducteurs

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOLUME 116 AOUT 1969,"EFFECTS OF AR PLASMA ON OXIDIZED SILICON SURFACES"H.NAKATSUKA PAGE 290 C ABSTRACT NO92 *
*REVUE AMERICAINE" CHEMICAL ABSTRACTS"VOLUME 69,1968"ELECTRON BEAUMEXPOSURE OF SILICON DIOXIDE"DENDA SEIICHI ET AL.PAGE 5857 ABSTRACT NO6257 2W PAGE 5857 ABSTRACT NO 62572W) *
AL.PAGE 5857 ABSTRACT NO6257 2W PAGE 5857 ABSTRACT NO 62572W) *
CHEMICAL ABSTRACTS"VOLUME 69,1968"ELECTRON BEAUMEXPOSURE OF SILICON DIOXIDE"DENDA SEIICHI ET *
PLASMA ON OXIDIZED SILICON SURFACES"H.NAKATSUKA PAGE 290 C ABSTRACT NO92 *
REVUE AMERICAINE JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOLUME 116 AOUT 1969,"EFFECTS OF AR *
REVUE AMERICAINE" *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475265A3 (en) * 1990-09-12 1994-05-25 Hitachi Ltd Insulator for solid state device and its fabrication method
EP0572704A1 (en) * 1992-06-05 1993-12-08 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
EP0653782A3 (en) * 1993-11-10 1996-04-24 Canon Sales Co Inc Process for reforming an insulating layer.

Also Published As

Publication number Publication date
DE2058059A1 (de) 1971-06-09
FR2068673B1 (OSRAM) 1974-09-06
NL7017242A (OSRAM) 1971-05-28

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