FR2068673A1 - Semiconductor devices with low temp insulators of reduced porosity - Google Patents
Semiconductor devices with low temp insulators of reduced porosityInfo
- Publication number
- FR2068673A1 FR2068673A1 FR7042583A FR7042583A FR2068673A1 FR 2068673 A1 FR2068673 A1 FR 2068673A1 FR 7042583 A FR7042583 A FR 7042583A FR 7042583 A FR7042583 A FR 7042583A FR 2068673 A1 FR2068673 A1 FR 2068673A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- insulators
- sio2
- low temp
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 229910052724 xenon Inorganic materials 0.000 abstract 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9429169A JPS4836599B1 (fr) | 1969-11-26 | 1969-11-26 | |
JP9429269A JPS556291B1 (fr) | 1969-11-26 | 1969-11-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2068673A1 true FR2068673A1 (en) | 1971-08-27 |
FR2068673B1 FR2068673B1 (fr) | 1974-09-06 |
Family
ID=26435554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7042583A Granted FR2068673A1 (en) | 1969-11-26 | 1970-11-26 | Semiconductor devices with low temp insulators of reduced porosity |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2058059A1 (fr) |
FR (1) | FR2068673A1 (fr) |
NL (1) | NL7017242A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0475265A2 (fr) * | 1990-09-12 | 1992-03-18 | Hitachi, Ltd. | Isolant pour dispositif à l'état et sa méthode de fabrication |
EP0572704A1 (fr) * | 1992-06-05 | 1993-12-08 | Semiconductor Process Laboratory Co., Ltd. | Procédé de fabrication d'un dispositif semi-conducteur comportant une méthode de réforme d'une couche isolante obtenue par CVD à basse température |
EP0653782A2 (fr) * | 1993-11-10 | 1995-05-17 | Canon Sales Co., Inc. | Procédé de reformage d'un film isolant |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1511986A (fr) * | 1966-02-24 | 1968-02-02 | Rca Corp | Circuits intégrés à semi-conducteurs |
-
1970
- 1970-11-25 DE DE19702058059 patent/DE2058059A1/de active Pending
- 1970-11-25 NL NL7017242A patent/NL7017242A/xx unknown
- 1970-11-26 FR FR7042583A patent/FR2068673A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1511986A (fr) * | 1966-02-24 | 1968-02-02 | Rca Corp | Circuits intégrés à semi-conducteurs |
Non-Patent Citations (7)
Title |
---|
(REVUE AMERICAINE JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOLUME 116 AOUT 1969,"EFFECTS OF AR PLASMA ON OXIDIZED SILICON SURFACES"H.NAKATSUKA PAGE 290 C ABSTRACT NO92 * |
*REVUE AMERICAINE" CHEMICAL ABSTRACTS"VOLUME 69,1968"ELECTRON BEAUMEXPOSURE OF SILICON DIOXIDE"DENDA SEIICHI ET AL.PAGE 5857 ABSTRACT NO6257 2W PAGE 5857 ABSTRACT NO 62572W) * |
AL.PAGE 5857 ABSTRACT NO6257 2W PAGE 5857 ABSTRACT NO 62572W) * |
CHEMICAL ABSTRACTS"VOLUME 69,1968"ELECTRON BEAUMEXPOSURE OF SILICON DIOXIDE"DENDA SEIICHI ET * |
PLASMA ON OXIDIZED SILICON SURFACES"H.NAKATSUKA PAGE 290 C ABSTRACT NO92 * |
REVUE AMERICAINE JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOLUME 116 AOUT 1969,"EFFECTS OF AR * |
REVUE AMERICAINE" * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0475265A2 (fr) * | 1990-09-12 | 1992-03-18 | Hitachi, Ltd. | Isolant pour dispositif à l'état et sa méthode de fabrication |
EP0475265A3 (en) * | 1990-09-12 | 1994-05-25 | Hitachi Ltd | Insulator for solid state device and its fabrication method |
EP0572704A1 (fr) * | 1992-06-05 | 1993-12-08 | Semiconductor Process Laboratory Co., Ltd. | Procédé de fabrication d'un dispositif semi-conducteur comportant une méthode de réforme d'une couche isolante obtenue par CVD à basse température |
EP0653782A2 (fr) * | 1993-11-10 | 1995-05-17 | Canon Sales Co., Inc. | Procédé de reformage d'un film isolant |
EP0653782A3 (fr) * | 1993-11-10 | 1996-04-24 | Canon Sales Co Inc | Procédé de reformage d'un film isolant. |
Also Published As
Publication number | Publication date |
---|---|
NL7017242A (fr) | 1971-05-28 |
DE2058059A1 (de) | 1971-06-09 |
FR2068673B1 (fr) | 1974-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1202740A (en) | Film circuits | |
GB1276745A (en) | Improvements in or relating to semiconductor devices | |
ES480925A1 (es) | Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor. | |
FR2068673A1 (en) | Semiconductor devices with low temp insulators of reduced porosity | |
GB1389338A (en) | Surge protective devices and methods of making same | |
FR1499490A (fr) | Compositions de verre, dispositifs électriques revêtus de ces compositions et leurprocédé de fabrication | |
US3679942A (en) | Metal-oxide-metal, thin-film capacitors and method of making same | |
GB1073069A (en) | Process for producing a superconductor | |
GB978992A (en) | Insulation | |
JPS5640260A (en) | Manufacture of semiconductor device | |
US3565807A (en) | Composite dielectric body containing an integral region having a different dielectric constant | |
JPS5797634A (en) | Hybrid integrated circuit | |
US3239731A (en) | Self-healing thin-film capacitor | |
GB1141644A (en) | Electrical switching and memory devices | |
FR2348897A1 (fr) | Contacts ohmiques sur silicium a partir de pates serigraphiables et procede de mise en oeuvre | |
FR2301093A1 (fr) | Methode de diffusion de regions isolantes dans un substrat semi-conducteur | |
JPS53107285A (en) | Production of wiring structural body | |
JPS542070A (en) | Manufacture for semiconductor element | |
JPS52156581A (en) | Semiconductor device | |
JPS55166937A (en) | Manufacture of semiconductor device | |
JPS5325381A (en) | Semiconductor device having multilayer wiring structure | |
JPS5268371A (en) | Semiconductor device | |
JPS53148281A (en) | Semiconductor device | |
CH519839A (de) | Verfahren zur Herstellung von elektrischen Dünnschichtkreisen mit Kondensatoren | |
JPS56130924A (en) | Manufacture of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |