FR2063161A1 - - Google Patents
Info
- Publication number
- FR2063161A1 FR2063161A1 FR7032133A FR7032133A FR2063161A1 FR 2063161 A1 FR2063161 A1 FR 2063161A1 FR 7032133 A FR7032133 A FR 7032133A FR 7032133 A FR7032133 A FR 7032133A FR 2063161 A1 FR2063161 A1 FR 2063161A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F22—STEAM GENERATION
- F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
- F22B21/00—Water-tube boilers of vertical or steeply-inclined type, i.e. the water-tube sets being arranged vertically or substantially vertically
- F22B21/02—Water-tube boilers of vertical or steeply-inclined type, i.e. the water-tube sets being arranged vertically or substantially vertically built-up from substantially straight water tubes
- F22B21/04—Water-tube boilers of vertical or steeply-inclined type, i.e. the water-tube sets being arranged vertically or substantially vertically built-up from substantially straight water tubes involving a single upper drum and a single lower drum, e.g. the drums being arranged transversely
- F22B21/06—Water-tube boilers of vertical or steeply-inclined type, i.e. the water-tube sets being arranged vertically or substantially vertically built-up from substantially straight water tubes involving a single upper drum and a single lower drum, e.g. the drums being arranged transversely the water tubes being arranged annularly in sets, e.g. in abutting connection with drums of annular shape
- F22B21/065—Water-tube boilers of vertical or steeply-inclined type, i.e. the water-tube sets being arranged vertically or substantially vertically built-up from substantially straight water tubes involving a single upper drum and a single lower drum, e.g. the drums being arranged transversely the water tubes being arranged annularly in sets, e.g. in abutting connection with drums of annular shape involving an upper and lower drum of annular shape
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/055—Fuse
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85805369A | 1969-09-15 | 1969-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2063161A1 true FR2063161A1 (fr) | 1971-07-09 |
FR2063161B1 FR2063161B1 (fr) | 1973-11-23 |
Family
ID=25327363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7032133A Expired FR2063161B1 (fr) | 1969-09-15 | 1970-08-10 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3641516A (fr) |
JP (1) | JPS5117020B1 (fr) |
BE (1) | BE755039A (fr) |
CA (1) | CA922805A (fr) |
CH (1) | CH507568A (fr) |
DE (1) | DE2041343C3 (fr) |
FR (1) | FR2063161B1 (fr) |
GB (1) | GB1315171A (fr) |
SE (1) | SE366864B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2098369A1 (fr) * | 1970-07-13 | 1972-03-10 | Intersil Memory Corp |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2022918C3 (de) * | 1970-05-11 | 1979-02-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Integrierter Halbleiter-Festwertspeicher |
DE2023219C3 (de) * | 1970-05-12 | 1979-09-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Programmierbarer Halbleiter-Festwertspeicher |
US3742592A (en) * | 1970-07-13 | 1973-07-03 | Intersil Inc | Electrically alterable integrated circuit read only memory unit and process of manufacturing |
US3848238A (en) * | 1970-07-13 | 1974-11-12 | Intersil Inc | Double junction read only memory |
CH533707A (fr) * | 1971-07-01 | 1973-02-15 | Bonneterie S A Et | Dispositif pour la programmation d'informations destinées à la commande sélective d'éléments de tricotage de métiers à tricoter |
FR2228271B1 (fr) * | 1973-05-04 | 1976-11-12 | Honeywell Bull Soc Ind | |
JPS5049955A (fr) * | 1973-09-04 | 1975-05-06 | ||
US3935634A (en) * | 1973-09-04 | 1976-02-03 | Kulite Semiconductor Products, Inc. | Methods of fabricating integrated transducer assemblies |
JPS51227A (ja) * | 1974-06-20 | 1976-01-05 | Fujitsu Ltd | Setsugohakaigatapuroguramaburu riido onrii memorihandotaisochi |
US3999205A (en) * | 1975-04-03 | 1976-12-21 | Rca Corporation | Rectifier structure for a semiconductor integrated circuit device |
FR2352371A1 (fr) * | 1976-05-21 | 1977-12-16 | Intersil Inc | Element a deux emetteurs pour matrice de memoire passive programmable sur place |
US4145702A (en) * | 1977-07-05 | 1979-03-20 | Burroughs Corporation | Electrically programmable read-only-memory device |
US4162538A (en) * | 1977-07-27 | 1979-07-24 | Xerox Corporation | Thin film programmable read-only memory having transposable input and output lines |
FR2404895A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Cellule de memoire programmable a diodes semiconductrices |
CA1135854A (fr) * | 1977-09-30 | 1982-11-16 | Michel Moussie | Cellule de memoire morte programmable |
US4153883A (en) * | 1977-12-16 | 1979-05-08 | Harris Corporation | Electrically alterable amplifier configurations |
US4223277A (en) * | 1978-12-27 | 1980-09-16 | Harris Corporation | Electrically alterable field effect transistor amplifier configuration |
US4322822A (en) * | 1979-01-02 | 1982-03-30 | Mcpherson Roger K | High density VMOS electrically programmable ROM |
JPS55142475A (en) * | 1979-04-23 | 1980-11-07 | Fujitsu Ltd | Decoder circuit |
US4388703A (en) * | 1979-05-10 | 1983-06-14 | General Electric Company | Memory device |
DE3017636A1 (de) * | 1979-05-10 | 1980-11-20 | Gen Electric | Programmierbarer speicherbaustein und programmierverfahren |
DE3036869C2 (de) * | 1979-10-01 | 1985-09-05 | Hitachi, Ltd., Tokio/Tokyo | Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren |
GB2070329B (en) * | 1980-01-25 | 1983-10-26 | Tokyo Shibaura Electric Co | Semiconductor memory device |
US4404654A (en) * | 1980-01-29 | 1983-09-13 | Sharp Kabushiki Kaisha | Semiconductor device system |
EP0041770A3 (fr) * | 1980-05-23 | 1984-07-11 | Texas Instruments Incorporated | Elément de mémoire morte programmable et procédé pour sa fabrication |
US4420820A (en) * | 1980-12-29 | 1983-12-13 | Signetics Corporation | Programmable read-only memory |
DE3150164A1 (de) * | 1980-12-29 | 1982-08-12 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Programmierbarer festwertspeicher und speicherzelle zur anwendung in einem derartigen speicher |
US4442507A (en) * | 1981-02-23 | 1984-04-10 | Burroughs Corporation | Electrically programmable read-only memory stacked above a semiconductor substrate |
US4412308A (en) * | 1981-06-15 | 1983-10-25 | International Business Machines Corporation | Programmable bipolar structures |
US4403399A (en) * | 1981-09-28 | 1983-09-13 | Harris Corporation | Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking |
US4814853A (en) * | 1981-10-28 | 1989-03-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device with programmable fuse |
US4569120A (en) * | 1983-03-07 | 1986-02-11 | Signetics Corporation | Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation |
US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US5367208A (en) * | 1986-09-19 | 1994-11-22 | Actel Corporation | Reconfigurable programmable interconnect architecture |
GB2215124A (en) * | 1988-02-16 | 1989-09-13 | Stc Plc | Integrated circuit underpasses |
US4849365A (en) * | 1988-02-16 | 1989-07-18 | Honeywell Inc. | Selective integrated circuit interconnection |
US5267193A (en) * | 1990-09-28 | 1993-11-30 | University Of Maryland | Multi-valued memory cell using bidirectional resonant tunneling diodes |
US5847441A (en) * | 1996-05-10 | 1998-12-08 | Micron Technology, Inc. | Semiconductor junction antifuse circuit |
US5852323A (en) * | 1997-01-16 | 1998-12-22 | Xilinx, Inc. | Electrically programmable antifuse using metal penetration of a P-N junction |
US5909049A (en) * | 1997-02-11 | 1999-06-01 | Actel Corporation | Antifuse programmed PROM cell |
US6323534B1 (en) | 1999-04-16 | 2001-11-27 | Micron Technology, Inc. | Fuse for use in a semiconductor device |
US6629309B1 (en) * | 2001-06-27 | 2003-09-30 | Lsi Logic Corporation | Mask-programmable ROM cell |
GB0128665D0 (en) * | 2001-11-30 | 2002-01-23 | Power Innovations Ltd | Overvoltage protection device |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6979879B1 (en) | 2002-01-08 | 2005-12-27 | National Semiconductor Corporation | Trim zener using double poly process |
US6661691B2 (en) | 2002-04-02 | 2003-12-09 | Hewlett-Packard Development Company, L.P. | Interconnection structure and methods |
US6940085B2 (en) | 2002-04-02 | 2005-09-06 | Hewlett-Packard Development Company, I.P. | Memory structures |
US6967350B2 (en) * | 2002-04-02 | 2005-11-22 | Hewlett-Packard Development Company, L.P. | Memory structures |
US6821848B2 (en) | 2002-04-02 | 2004-11-23 | Hewlett-Packard Development Company, L.P. | Tunnel-junction structures and methods |
US20030183868A1 (en) * | 2002-04-02 | 2003-10-02 | Peter Fricke | Memory structures |
US6643159B2 (en) | 2002-04-02 | 2003-11-04 | Hewlett-Packard Development Company, L.P. | Cubic memory array |
US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
US6804136B2 (en) | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US6888739B2 (en) * | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
US6996009B2 (en) * | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
US7193893B2 (en) * | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US6774458B2 (en) * | 2002-07-23 | 2004-08-10 | Hewlett Packard Development Company, L.P. | Vertical interconnection structure and methods |
US6858883B2 (en) * | 2003-06-03 | 2005-02-22 | Hewlett-Packard Development Company, L.P. | Partially processed tunnel junction control element |
US7136322B2 (en) | 2004-08-05 | 2006-11-14 | Analog Devices, Inc. | Programmable semi-fusible link read only memory and method of margin testing same |
JP4685388B2 (ja) * | 2004-09-06 | 2011-05-18 | Okiセミコンダクタ株式会社 | 半導体装置 |
US8330202B2 (en) * | 2005-02-23 | 2012-12-11 | Micron Technology, Inc. | Germanium-silicon-carbide floating gates in memories |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7709402B2 (en) * | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7872898B2 (en) * | 2009-04-15 | 2011-01-18 | Ememory Technology Inc. | One time programmable read only memory and programming method thereof |
US10404473B1 (en) | 2018-09-05 | 2019-09-03 | Accelor Ltd. | Systems and methods for processing transaction verification operations in decentralized applications |
US10432405B1 (en) | 2018-09-05 | 2019-10-01 | Accelor Ltd. | Systems and methods for accelerating transaction verification by performing cryptographic computing tasks in parallel |
US10333694B1 (en) | 2018-10-15 | 2019-06-25 | Accelor Ltd. | Systems and methods for secure smart contract execution via read-only distributed ledger |
US11145379B2 (en) * | 2019-10-29 | 2021-10-12 | Key Foundry Co., Ltd. | Electronic fuse cell array structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3191151A (en) * | 1962-11-26 | 1965-06-22 | Fairchild Camera Instr Co | Programmable circuit |
US3244949A (en) * | 1962-03-16 | 1966-04-05 | Fairchild Camera Instr Co | Voltage regulator |
DE1918667A1 (de) * | 1968-04-15 | 1969-11-13 | Ibm | Datenspeicher mit Dioden |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3245051A (en) * | 1960-11-16 | 1966-04-05 | John H Robb | Information storage matrices |
US3412220A (en) * | 1963-11-26 | 1968-11-19 | Sprague Electric Co | Voltage sensitive switch and method of making |
US3411052A (en) * | 1965-10-28 | 1968-11-12 | Ncr Co | Logical circuit arrangement having a constant current gain for controlled operation i saturation |
US3414782A (en) * | 1965-12-03 | 1968-12-03 | Westinghouse Electric Corp | Semiconductor structure particularly for performing unipolar transistor functions in integrated circuits |
US3488636A (en) * | 1966-08-22 | 1970-01-06 | Fairchild Camera Instr Co | Optically programmable read only memory |
US3500148A (en) * | 1968-08-28 | 1970-03-10 | Bell Telephone Labor Inc | Multipurpose integrated circuit arrangement |
-
0
- BE BE755039D patent/BE755039A/fr unknown
-
1969
- 1969-09-15 US US858053A patent/US3641516A/en not_active Expired - Lifetime
-
1970
- 1970-08-03 GB GB3735270A patent/GB1315171A/en not_active Expired
- 1970-08-10 FR FR7032133A patent/FR2063161B1/fr not_active Expired
- 1970-08-18 CA CA090990A patent/CA922805A/en not_active Expired
- 1970-08-20 DE DE2041343A patent/DE2041343C3/de not_active Expired
- 1970-08-28 JP JP7502470A patent/JPS5117020B1/ja active Pending
- 1970-09-02 CH CH1309870A patent/CH507568A/de not_active IP Right Cessation
- 1970-09-15 SE SE12533/70A patent/SE366864B/xx unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3244949A (en) * | 1962-03-16 | 1966-04-05 | Fairchild Camera Instr Co | Voltage regulator |
US3191151A (en) * | 1962-11-26 | 1965-06-22 | Fairchild Camera Instr Co | Programmable circuit |
DE1918667A1 (de) * | 1968-04-15 | 1969-11-13 | Ibm | Datenspeicher mit Dioden |
Non-Patent Citations (3)
Title |
---|
(REVUE AMERICAINE"IEEE TRANSACTIONS ON ELECTRON DEVICES",VOL. ED 16,NO 4,APRIL 1969,PAGES 351- 356 ARTICLE:THE ANALYSIS OF CHEMICAL AND METALLURGICAL CHANGES IN MICROCIRCUIT METALIZATION SYSTEMS"PAR J.J.BART) * |
REVUE AMERICAINE"IEEE TRANSACTIONS ON ELECTRON DEVICES",VOL. ED 16,NO 4,APRIL 1969,PAGES 351- 356 *ARTICLE:THE ANALYSIS OF CHEMICAL AND METALLURGICAL CHANGES IN MICROCIRCUIT METALIZATION * |
SYSTEMS"PAR J.J.BART) * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2098369A1 (fr) * | 1970-07-13 | 1972-03-10 | Intersil Memory Corp |
Also Published As
Publication number | Publication date |
---|---|
US3641516A (en) | 1972-02-08 |
DE2041343B2 (de) | 1978-04-06 |
DE2041343C3 (de) | 1978-11-30 |
CH507568A (de) | 1971-05-15 |
SE366864B (fr) | 1974-05-06 |
BE755039A (fr) | 1971-02-01 |
GB1315171A (en) | 1973-04-26 |
CA922805A (en) | 1973-03-13 |
JPS5117020B1 (fr) | 1976-05-29 |
FR2063161B1 (fr) | 1973-11-23 |
DE2041343A1 (de) | 1971-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |