FR2046838A1 - - Google Patents

Info

Publication number
FR2046838A1
FR2046838A1 FR7017084A FR7017084A FR2046838A1 FR 2046838 A1 FR2046838 A1 FR 2046838A1 FR 7017084 A FR7017084 A FR 7017084A FR 7017084 A FR7017084 A FR 7017084A FR 2046838 A1 FR2046838 A1 FR 2046838A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7017084A
Other languages
French (fr)
Other versions
FR2046838B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2046838A1 publication Critical patent/FR2046838A1/fr
Application granted granted Critical
Publication of FR2046838B1 publication Critical patent/FR2046838B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction
FR7017084A 1969-06-18 1970-05-12 Expired FR2046838B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83441269A 1969-06-18 1969-06-18
US83771769A 1969-06-30 1969-06-30

Publications (2)

Publication Number Publication Date
FR2046838A1 true FR2046838A1 (enExample) 1971-03-12
FR2046838B1 FR2046838B1 (enExample) 1973-12-07

Family

ID=27125705

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7017084A Expired FR2046838B1 (enExample) 1969-06-18 1970-05-12
FR7024282A Withdrawn FR2048075A1 (enExample) 1969-06-18 1970-06-30

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7024282A Withdrawn FR2048075A1 (enExample) 1969-06-18 1970-06-30

Country Status (5)

Country Link
US (2) US3783119A (enExample)
BE (1) BE750240A (enExample)
DE (2) DE2028422A1 (enExample)
FR (2) FR2046838B1 (enExample)
GB (2) GB1309764A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892650A (en) * 1972-12-29 1975-07-01 Ibm Chemical sputtering purification process
JPS588152B2 (ja) * 1974-04-03 1983-02-14 株式会社日立製作所 ダイオ−ド ト ソノセイゾウホウ
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
AT384121B (de) * 1983-03-28 1987-10-12 Shell Austria Verfahren zum gettern von halbleiterbauelementen
US5223734A (en) * 1991-12-18 1993-06-29 Micron Technology, Inc. Semiconductor gettering process using backside chemical mechanical planarization (CMP) and dopant diffusion
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1507704A (fr) * 1966-01-10 1967-12-29 Philips Nv Procédé pour faire disparaître des ions d'un métal alcalin d'une couche d'oxyde dont est muni un corps semi-conducteur
FR1515678A (fr) * 1966-03-28 1968-03-01 Matsushita Electronics Corp Procédé de fabrication des dispositifs à semi-conducteur
FR1571223A (enExample) * 1967-09-29 1969-06-13

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1507704A (fr) * 1966-01-10 1967-12-29 Philips Nv Procédé pour faire disparaître des ions d'un métal alcalin d'une couche d'oxyde dont est muni un corps semi-conducteur
FR1515678A (fr) * 1966-03-28 1968-03-01 Matsushita Electronics Corp Procédé de fabrication des dispositifs à semi-conducteur
FR1571223A (enExample) * 1967-09-29 1969-06-13

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE JOURNAL OF THE ELECTROCHEMICAL SOCIETY VOL. 115 AVRIL 1968, "PREPARATION AND PROPERTIES OF THIN FILM BORON NITRIDE" M.J. RAND ET AL, PAGES 423 A 429.) *
REVUE AMERICAINE PROCEEDINGS OF THE IEEE, VOL. 52, JUIN 1964, "LOWTEMPERATURE PASSIVATION OF SILICON DEVICES USING EVA-PORATED LEAD FILM" T. TOKUYAMA, PAGES 723-724) *
REVUE AMERICAINE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-12, FEVRIER 1966, "SODIUM DISTRIBUTION IN THERMAL OXIDE ON SILICON BY RADIOCHEMICAL AND MOS ANALYSIS" E. YON ET AL P. 276-280 *

Also Published As

Publication number Publication date
FR2046838B1 (enExample) 1973-12-07
BE750240A (fr) 1970-10-16
GB1257597A (enExample) 1971-12-22
US3669731A (en) 1972-06-13
FR2048075A1 (enExample) 1971-03-19
DE2028422A1 (de) 1971-01-07
US3783119A (en) 1974-01-01
GB1309764A (en) 1973-03-14
DE2031884A1 (de) 1971-01-07

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Legal Events

Date Code Title Description
ST Notification of lapse