FR2017597B1 - - Google Patents
Info
- Publication number
- FR2017597B1 FR2017597B1 FR6919896A FR6919896A FR2017597B1 FR 2017597 B1 FR2017597 B1 FR 2017597B1 FR 6919896 A FR6919896 A FR 6919896A FR 6919896 A FR6919896 A FR 6919896A FR 2017597 B1 FR2017597 B1 FR 2017597B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75834068A | 1968-09-09 | 1968-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2017597A1 FR2017597A1 (OSRAM) | 1970-05-22 |
| FR2017597B1 true FR2017597B1 (OSRAM) | 1974-09-20 |
Family
ID=25051387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR6919896A Expired FR2017597B1 (OSRAM) | 1968-09-09 | 1969-06-16 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3651565A (OSRAM) |
| JP (1) | JPS5248463B1 (OSRAM) |
| DE (1) | DE1942239C2 (OSRAM) |
| FR (1) | FR2017597B1 (OSRAM) |
| GB (1) | GB1246913A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50154073A (OSRAM) * | 1974-05-31 | 1975-12-11 | ||
| NL176322C (nl) * | 1976-02-24 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting met beveiligingsschakeling. |
| JPS5478092A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Lateral semiconductor device |
| IT1111981B (it) * | 1979-02-13 | 1986-01-13 | Ates Componenti Elettron | Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante |
| JPS6252966A (ja) * | 1985-09-02 | 1987-03-07 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1117927A (en) * | 1914-04-13 | 1914-11-17 | Christen U Thiesen | Parcel-post envelop. |
| FR1258010A (fr) * | 1959-06-30 | 1961-04-07 | Fairchild Semiconductor | Procédé de fabrication de transistors |
| US3320651A (en) * | 1963-04-03 | 1967-05-23 | Gen Motors Corp | Method for making cadmium sulphide field effect transistor |
| US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
| US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
| NL154867B (nl) * | 1964-02-13 | 1977-10-17 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderinrichting, alsmede volgens deze werkwijze vervaardigde veldeffect-transistor en planaire transistor. |
| CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
| US3445924A (en) * | 1965-06-30 | 1969-05-27 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characteristics |
| US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
| US3445734A (en) * | 1965-12-22 | 1969-05-20 | Ibm | Single diffused surface transistor and method of making same |
| US3401319A (en) * | 1966-03-08 | 1968-09-10 | Gen Micro Electronics Inc | Integrated latch circuit |
| US3508324A (en) * | 1967-02-13 | 1970-04-28 | Philco Ford Corp | Method of making contacts to semiconductor devices |
| US3470609A (en) * | 1967-08-18 | 1969-10-07 | Conductron Corp | Method of producing a control system |
-
1968
- 1968-09-09 US US758340A patent/US3651565A/en not_active Expired - Lifetime
-
1969
- 1969-06-16 FR FR6919896A patent/FR2017597B1/fr not_active Expired
- 1969-06-17 JP JP44047371A patent/JPS5248463B1/ja active Pending
- 1969-08-20 DE DE1942239A patent/DE1942239C2/de not_active Expired
- 1969-09-08 GB GB44240/69A patent/GB1246913A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5248463B1 (OSRAM) | 1977-12-09 |
| GB1246913A (en) | 1971-09-22 |
| DE1942239A1 (de) | 1970-04-16 |
| US3651565A (en) | 1972-03-28 |
| DE1942239C2 (de) | 1982-11-25 |
| FR2017597A1 (OSRAM) | 1970-05-22 |