FR1574595A - - Google Patents

Info

Publication number
FR1574595A
FR1574595A FR1574595DA FR1574595A FR 1574595 A FR1574595 A FR 1574595A FR 1574595D A FR1574595D A FR 1574595DA FR 1574595 A FR1574595 A FR 1574595A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1574595A publication Critical patent/FR1574595A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
FR1574595D 1967-08-04 1968-07-29 Expired FR1574595A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0111192 1967-08-04

Publications (1)

Publication Number Publication Date
FR1574595A true FR1574595A (fr) 1969-07-11

Family

ID=7530798

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1574595D Expired FR1574595A (fr) 1967-08-04 1968-07-29

Country Status (5)

Country Link
US (1) US3566215A (fr)
DE (1) DE1614574A1 (fr)
FR (1) FR1574595A (fr)
GB (1) GB1221590A (fr)
NL (1) NL6807818A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0179138A1 (fr) * 1984-04-27 1986-04-30 Advanced Energy Fund Ltd Une methode de formation d'une structure semi-conductrice composee.

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969753A (en) * 1972-06-30 1976-07-13 Rockwell International Corporation Silicon on sapphire oriented for maximum mobility
GB1439759A (en) * 1972-11-24 1976-06-16 Mullard Ltd Semiconductor devices
GB1483849A (en) * 1974-09-21 1977-08-24 Nippon Electric Co Semiconductor laser device equipped with a silicon heat sink
JPH0656887B2 (ja) * 1982-02-03 1994-07-27 株式会社日立製作所 半導体装置およびその製法
DE3210086A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode, geeignet als drucksensor
CA1256590A (fr) * 1985-03-15 1989-06-27 Yuichi Matsui Dispositif a semiconducteur compose a couches a pas reticulaires differents
US4665415A (en) * 1985-04-24 1987-05-12 International Business Machines Corporation Semiconductor device with hole conduction via strained lattice
JPS61274313A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 半導体装置
USH557H (en) * 1986-11-07 1988-12-06 The United States Of America As Represented By The Department Of Energy Epitaxial strengthening of crystals
JPH0487381A (ja) * 1990-07-31 1992-03-19 Eastman Kodak Japan Kk 発光ダイオードアレイチップ
US5132746A (en) * 1991-01-04 1992-07-21 International Business Machines Corporation Biaxial-stress barrier shifts in pseudomorphic tunnel devices
WO1999005728A1 (fr) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Dispositif a semi-conducteur en nitrure
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US7102201B2 (en) * 2004-07-15 2006-09-05 International Business Machines Corporation Strained semiconductor device structures
JP2008071890A (ja) * 2006-09-13 2008-03-27 Toshiba Corp 半導体装置及びその製造方法
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0179138A1 (fr) * 1984-04-27 1986-04-30 Advanced Energy Fund Ltd Une methode de formation d'une structure semi-conductrice composee.
EP0179138A4 (fr) * 1984-04-27 1988-12-19 Advanced Energy Fund Ltd Une methode de formation d'une structure semi-conductrice composee.

Also Published As

Publication number Publication date
NL6807818A (fr) 1969-02-06
US3566215A (en) 1971-02-23
GB1221590A (en) 1971-02-03
DE1614574A1 (de) 1970-10-29

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Legal Events

Date Code Title Description
ST Notification of lapse