FR1572757A - - Google Patents

Info

Publication number
FR1572757A
FR1572757A FR1572757DA FR1572757A FR 1572757 A FR1572757 A FR 1572757A FR 1572757D A FR1572757D A FR 1572757DA FR 1572757 A FR1572757 A FR 1572757A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1572757A publication Critical patent/FR1572757A/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0057Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
FR1572757D 1967-06-29 1968-06-28 Expired FR1572757A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64989767A 1967-06-29 1967-06-29

Publications (1)

Publication Number Publication Date
FR1572757A true FR1572757A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1969-06-27

Family

ID=24606681

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1572757D Expired FR1572757A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1967-06-29 1968-06-28

Country Status (4)

Country Link
US (1) US3477936A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE717353A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1572757A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1167128A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518122A1 (fr) * 1981-12-16 1983-06-17 Energy Conversion Devices Inc Procede de fabrication des alliages et des dispositifs amorphes photosensibles par depot de phase chimique

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1212881A (en) * 1967-04-25 1970-11-18 Glaverbel Process for modifying glass and other materials
DE2130605C3 (de) * 1971-06-21 1974-02-07 Leitz Ernst Gmbh Sontrastierungsverfahren für mikroskopisch zu untersuchende Objekte
US3962057A (en) * 1971-06-21 1976-06-08 Ernst Leitz G.M.B.H. Method of imparting contrast to a microscope object
USRE32928E (en) * 1972-05-12 1989-05-23 Lfe Corporation Process and material for manufacturing semiconductor devices
USRE30505E (en) * 1972-05-12 1981-02-03 Lfe Corporation Process and material for manufacturing semiconductor devices
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
US3951709A (en) * 1974-02-28 1976-04-20 Lfe Corporation Process and material for semiconductor photomask fabrication
US3975252A (en) * 1975-03-14 1976-08-17 Bell Telephone Laboratories, Incorporated High-resolution sputter etching
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US4379040A (en) * 1981-01-29 1983-04-05 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
CA1184877A (en) 1982-05-12 1985-04-02 James B. Webb Method and apparatus for depositing conducting oxide on a substrate
US4906315A (en) * 1983-06-20 1990-03-06 Mcgrew Stephen P Surface relief holograms and holographic hot-stamping foils, and method of fabricating same
JPS62287513A (ja) * 1986-06-04 1987-12-14 株式会社リコー 透明導電膜およびその製造方法
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
US4849081A (en) * 1988-06-22 1989-07-18 The Boc Group, Inc. Formation of oxide films by reactive sputtering
DE69107101T2 (de) * 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
JP3689524B2 (ja) * 1996-03-22 2005-08-31 キヤノン株式会社 酸化アルミニウム膜及びその形成方法
FR2780054B1 (fr) * 1998-06-19 2000-07-21 Saint Gobain Vitrage Procede de depot d'une couche a base d'oxyde metallique sur un substrat verrier, substrat verrier ainsi revetu
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
EP1444727A4 (en) * 2001-10-22 2007-07-18 Unaxis Usa Inc PROCESS AND DEVICE FOR CORROSING THIN, DAMAGE-SENSITIVE LAYERS USING HIGH FREQUENCY PULSE PLASMA
JP2005054220A (ja) * 2003-08-01 2005-03-03 Canon Inc フッ化物薄膜の形成方法及びその形成装置
US20120160663A1 (en) * 2010-12-14 2012-06-28 Alliance For Sustainable Energy, Llc. Sputter Deposition and Annealing of High Conductivity Transparent Oxides

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB830392A (en) * 1956-05-17 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518122A1 (fr) * 1981-12-16 1983-06-17 Energy Conversion Devices Inc Procede de fabrication des alliages et des dispositifs amorphes photosensibles par depot de phase chimique

Also Published As

Publication number Publication date
GB1167128A (en) 1969-10-15
US3477936A (en) 1969-11-11
BE717353A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-12-30

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Legal Events

Date Code Title Description
ST Notification of lapse