FR1504977A - Procédé pour faire pénétrer par diffusion, dans un cristal semi-conducteur, une substance de dopage en phase gazeuse - Google Patents

Procédé pour faire pénétrer par diffusion, dans un cristal semi-conducteur, une substance de dopage en phase gazeuse

Info

Publication number
FR1504977A
FR1504977A FR87056A FR87056A FR1504977A FR 1504977 A FR1504977 A FR 1504977A FR 87056 A FR87056 A FR 87056A FR 87056 A FR87056 A FR 87056A FR 1504977 A FR1504977 A FR 1504977A
Authority
FR
France
Prior art keywords
diffusing
gas phase
semiconductor crystal
doping substance
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR87056A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of FR1504977A publication Critical patent/FR1504977A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
FR87056A 1965-12-13 1966-12-12 Procédé pour faire pénétrer par diffusion, dans un cristal semi-conducteur, une substance de dopage en phase gazeuse Expired FR1504977A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0100933 1965-12-13

Publications (1)

Publication Number Publication Date
FR1504977A true FR1504977A (fr) 1967-12-08

Family

ID=7523384

Family Applications (1)

Application Number Title Priority Date Filing Date
FR87056A Expired FR1504977A (fr) 1965-12-13 1966-12-12 Procédé pour faire pénétrer par diffusion, dans un cristal semi-conducteur, une substance de dopage en phase gazeuse

Country Status (9)

Country Link
US (1) US3502517A (enExample)
JP (1) JPS4830703B1 (enExample)
AT (1) AT264591B (enExample)
CH (1) CH489906A (enExample)
DE (1) DE1544273A1 (enExample)
FR (1) FR1504977A (enExample)
GB (1) GB1100780A (enExample)
NL (1) NL6614433A (enExample)
SE (1) SE331719B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2018358A1 (enExample) * 1968-09-18 1970-05-29 Gen Electric

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601888A (en) * 1969-04-25 1971-08-31 Gen Electric Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
US3717514A (en) * 1970-10-06 1973-02-20 Motorola Inc Single crystal silicon contact for integrated circuits and method for making same
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3940288A (en) 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device
US3880676A (en) * 1973-10-29 1975-04-29 Rca Corp Method of making a semiconductor device
JPS5950113B2 (ja) * 1975-11-05 1984-12-06 株式会社東芝 半導体装置
US4063973A (en) * 1975-11-10 1977-12-20 Tokyo Shibaura Electric Co., Ltd. Method of making a semiconductor device
JPS5317081A (en) * 1976-07-30 1978-02-16 Sharp Corp Production of i2l device
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion
US4157926A (en) * 1977-02-24 1979-06-12 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a high electrical frequency infrared detector by vacuum deposition
US4274892A (en) * 1978-12-14 1981-06-23 Trw Inc. Dopant diffusion method of making semiconductor products
US4472212A (en) * 1982-02-26 1984-09-18 At&T Bell Laboratories Method for fabricating a semiconductor device
WO1983003029A1 (en) * 1982-02-26 1983-09-01 Western Electric Co Diffusion of shallow regions
US4698104A (en) * 1984-12-06 1987-10-06 Xerox Corporation Controlled isotropic doping of semiconductor materials
EP0410390A3 (en) * 1989-07-27 1993-02-24 Seiko Instruments Inc. Method of producing semiconductor device
WO2012170087A1 (en) * 2011-06-10 2012-12-13 Massachusetts Institute Of Technology High-concentration active doping in semiconductors and semiconductor devices produced by such doping

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
NL268758A (enExample) * 1960-09-20
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
BE636317A (enExample) * 1962-08-23 1900-01-01
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3326729A (en) * 1963-08-20 1967-06-20 Hughes Aircraft Co Epitaxial method for the production of microcircuit components
NL6504750A (enExample) * 1964-04-15 1965-10-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2018358A1 (enExample) * 1968-09-18 1970-05-29 Gen Electric

Also Published As

Publication number Publication date
JPS4830703B1 (enExample) 1973-09-22
DE1544273A1 (de) 1969-09-04
SE331719B (enExample) 1971-01-11
GB1100780A (en) 1968-01-24
AT264591B (de) 1968-09-10
US3502517A (en) 1970-03-24
NL6614433A (enExample) 1967-06-14
CH489906A (de) 1970-04-30

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