FR1455657A - Procédé de dopage de corps semiconducteurs - Google Patents
Procédé de dopage de corps semiconducteursInfo
- Publication number
- FR1455657A FR1455657A FR40144A FR40144A FR1455657A FR 1455657 A FR1455657 A FR 1455657A FR 40144 A FR40144 A FR 40144A FR 40144 A FR40144 A FR 40144A FR 1455657 A FR1455657 A FR 1455657A
- Authority
- FR
- France
- Prior art keywords
- semiconductor bodies
- doping semiconductor
- doping
- bodies
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0094470 | 1964-12-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1455657A true FR1455657A (fr) | 1966-04-01 |
Family
ID=7518715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR40144A Expired FR1455657A (fr) | 1964-12-05 | 1965-11-29 | Procédé de dopage de corps semiconducteurs |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1544255A1 (fr) |
FR (1) | FR1455657A (fr) |
GB (1) | GB1054360A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2178751B1 (fr) * | 1972-04-05 | 1974-10-18 | Radiotechnique Compelec | |
US4804634A (en) * | 1981-04-24 | 1989-02-14 | National Semiconductor Corporation | Integrated circuit lateral transistor structure |
-
0
- GB GB1054360D patent/GB1054360A/en active Active
-
1964
- 1964-12-05 DE DE19641544255 patent/DE1544255A1/de active Pending
-
1965
- 1965-11-29 FR FR40144A patent/FR1455657A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1544255A1 (de) | 1970-07-02 |
GB1054360A (fr) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR6460494D0 (pt) | Fabricacao de dispositivos semi-condutores | |
FR1379636A (fr) | Procédé de construction de dômes stéréométriques | |
SU435616A3 (ru) | Способ безобжигового упрочнения окатышей | |
FR1455657A (fr) | Procédé de dopage de corps semiconducteurs | |
BE603265A (fr) | Procédé de formation de jonctions | |
FR1441314A (fr) | Fabrication de corps semi-conducteurs allongés | |
FR1436298A (fr) | Procédé de fabrication de 2-alcoyl- et de 2-aryl-delta2-oxazolines | |
FR1462591A (fr) | Procédé de dopage de régions dans des corps semi-conducteurs | |
FR1420287A (fr) | Procédé de dédoublement direct de n-benzoyl-dl-sérine | |
FR1490480A (fr) | Procédé de fabrication de 2-imidazolidinones substituées | |
BE614058A (fr) | Procédé de formation de corps semiconducteurs. | |
FR1329928A (fr) | Procédé de formation de corps semi-conducteurs | |
CH424589A (de) | Betonbereitungsanlage | |
FR1368121A (fr) | Procédé de construction perfectionné | |
FR1378045A (fr) | Modification de polyodéfines | |
FR1486828A (fr) | Procédé de fabrication de supports de magnétogrammes | |
FR1400084A (fr) | Procédé de revêtement de semiconducteurs | |
FR1367012A (fr) | Procédé de métallisation | |
FR1284090A (fr) | Procédé de construction | |
FR1499019A (fr) | Procédé de fabrication de supports de magnétogrammes | |
FR1415131A (fr) | Production de dihydrodicyclopentadiénylamine | |
FR86377E (fr) | Procédé de fabrication de corps semiconducteurs monocristallins | |
FR1382206A (fr) | Procédé de construction | |
FR85554E (fr) | Procédé de fabrication de corps semi-conducteurs monocristallins | |
FR1373055A (fr) | Procédé de fabrication de corps semi-conducteurs monocristallins |