BE614058A - Procédé de formation de corps semiconducteurs. - Google Patents

Procédé de formation de corps semiconducteurs.

Info

Publication number
BE614058A
BE614058A BE614058A BE614058A BE614058A BE 614058 A BE614058 A BE 614058A BE 614058 A BE614058 A BE 614058A BE 614058 A BE614058 A BE 614058A BE 614058 A BE614058 A BE 614058A
Authority
BE
Belgium
Prior art keywords
forming semiconductor
semiconductor bodies
bodies
forming
semiconductor
Prior art date
Application number
BE614058A
Other languages
English (en)
Inventor
Robert Connell
Walter Charles Benzing
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of BE614058A publication Critical patent/BE614058A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/08Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
BE614058A 1961-02-27 1962-02-16 Procédé de formation de corps semiconducteurs. BE614058A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9204261A 1961-02-27 1961-02-27

Publications (1)

Publication Number Publication Date
BE614058A true BE614058A (fr) 1962-08-16

Family

ID=22231094

Family Applications (1)

Application Number Title Priority Date Filing Date
BE614058A BE614058A (fr) 1961-02-27 1962-02-16 Procédé de formation de corps semiconducteurs.

Country Status (5)

Country Link
BE (1) BE614058A (fr)
CH (1) CH438230A (fr)
DE (1) DE1444504A1 (fr)
GB (1) GB975840A (fr)
NL (1) NL275317A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117107357B (zh) * 2023-10-23 2024-04-19 中铝科学技术研究院有限公司 气相沉积用锗棒、其制备方法及四氯化锗还原装置

Also Published As

Publication number Publication date
CH438230A (fr) 1967-06-30
DE1444504A1 (de) 1968-11-07
NL275317A (fr) 1900-01-01
GB975840A (en) 1964-11-18

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