FR1504131A - Dispositif de protection contre des charges électrostatiques pour composants microélectroniques - Google Patents

Dispositif de protection contre des charges électrostatiques pour composants microélectroniques

Info

Publication number
FR1504131A
FR1504131A FR85853A FR85853A FR1504131A FR 1504131 A FR1504131 A FR 1504131A FR 85853 A FR85853 A FR 85853A FR 85853 A FR85853 A FR 85853A FR 1504131 A FR1504131 A FR 1504131A
Authority
FR
France
Prior art keywords
protection device
device against
electrostatic charges
microelectronic components
against electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR85853A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North American Aviation Corp
Original Assignee
North American Aviation Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Aviation Corp filed Critical North American Aviation Corp
Application granted granted Critical
Publication of FR1504131A publication Critical patent/FR1504131A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/002—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general without controlling loop

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR85853A 1966-05-02 1966-12-01 Dispositif de protection contre des charges électrostatiques pour composants microélectroniques Expired FR1504131A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US546937A US3407339A (en) 1966-05-02 1966-05-02 Voltage protection device utilizing a field effect transistor

Publications (1)

Publication Number Publication Date
FR1504131A true FR1504131A (fr) 1967-12-01

Family

ID=24182633

Family Applications (1)

Application Number Title Priority Date Filing Date
FR85853A Expired FR1504131A (fr) 1966-05-02 1966-12-01 Dispositif de protection contre des charges électrostatiques pour composants microélectroniques

Country Status (6)

Country Link
US (1) US3407339A (fr)
JP (2) JPS5139065B1 (fr)
DE (1) DE1613860B2 (fr)
FR (1) FR1504131A (fr)
GB (1) GB1190781A (fr)
NL (1) NL6700227A (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3601794A (en) * 1968-09-30 1971-08-24 Robert W Blomenkamp Vehicle acceleration and deceleration sensing and indicating system utilizing an ac input signal
US3604952A (en) * 1970-02-12 1971-09-14 Honeywell Inc Tri-level voltage generator circuit
US3742254A (en) * 1971-01-27 1973-06-26 Texas Instruments Inc Automatic mos grounding circuit
US3749936A (en) * 1971-08-19 1973-07-31 Texas Instruments Inc Fault protected output buffer
US3805095A (en) * 1972-12-29 1974-04-16 Ibm Fet threshold compensating bias circuit
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
US4148015A (en) * 1975-10-24 1979-04-03 Citizen Watch Co., Ltd. Electronic timepiece with an electrochromic display
GB2034996B (en) * 1978-10-20 1982-12-08 Philips Electronic Associated Voltage clamping circuit
US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
JPS5948567B2 (ja) * 1979-12-29 1984-11-27 富士通株式会社 シュミット・トリガ回路
NL8003874A (nl) * 1980-07-04 1982-02-01 Philips Nv Veldeffektcapaciteit.
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
JPH061833B2 (ja) * 1982-11-11 1994-01-05 株式会社東芝 Ｍｏｓ形半導体装置
EP0141819A4 (fr) * 1983-02-04 1986-06-05 Motorola Inc Circuit de tampon protege contre les courts-circuits.
JPS6150358A (ja) * 1984-08-20 1986-03-12 Toshiba Corp 半導体集積回路
US4937477A (en) * 1988-01-19 1990-06-26 Supertex, Inc. Integrated mos high-voltage level-translation circuit, structure and method
GB2226717A (en) * 1988-12-15 1990-07-04 Philips Nv Semiconductor circuit having an excess voltage protection circuit
US5010293A (en) * 1989-11-20 1991-04-23 Raynet Corporation Inrush current limiting circuit
IT1240103B (it) * 1990-05-18 1993-11-27 Texas Instruments Italia Spa Circuito di protezione mos-bip compatibile con la tecnologia cmos std 2 um.
US5593911A (en) * 1995-07-26 1997-01-14 Taiwan Semiconductor Manufacturing Company Ltd. Method of making ESD protection circuit with three stages
US5760631A (en) * 1996-04-24 1998-06-02 Winbond Electronics Corp. Protection circuit for a CMOS integrated circuit
US8717717B2 (en) * 2011-08-04 2014-05-06 Futurewei Technologies, Inc. High efficiency power regulator and method
US9954356B2 (en) 2015-05-15 2018-04-24 Analog Devices, Inc. Electrostatic discharge protection circuits for radio frequency communication systems
CN110828564B (zh) 2018-08-13 2022-04-08 香港科技大学 具有半导体性栅极的场效应晶体管

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296547A (en) * 1964-03-31 1967-01-03 Ii Louis Sickles Insulated gate field effect transistor gate return

Also Published As

Publication number Publication date
GB1190781A (en) 1970-05-06
JPS543339B1 (fr) 1979-02-21
DE1613860A1 (de) 1970-06-18
DE1613860B2 (de) 1972-06-22
JPS5139065B1 (fr) 1976-10-26
US3407339A (en) 1968-10-22
NL6700227A (fr) 1967-11-03

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