FR1496453A - Thyratrons au silicium - Google Patents
Thyratrons au siliciumInfo
- Publication number
- FR1496453A FR1496453A FR79655A FR79655A FR1496453A FR 1496453 A FR1496453 A FR 1496453A FR 79655 A FR79655 A FR 79655A FR 79655 A FR79655 A FR 79655A FR 1496453 A FR1496453 A FR 1496453A
- Authority
- FR
- France
- Prior art keywords
- thyratrons
- silicon
- silicon thyratrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/241—Asymmetrical thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB43430/65A GB1089407A (en) | 1965-10-13 | 1965-10-13 | Improvements in thyristors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1496453A true FR1496453A (fr) | 1967-09-29 |
Family
ID=10428720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR79655A Expired FR1496453A (fr) | 1965-10-13 | 1966-10-12 | Thyratrons au silicium |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1496453A (instruction) |
| GB (1) | GB1089407A (instruction) |
| NL (1) | NL6614367A (instruction) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01318263A (ja) * | 1988-06-20 | 1989-12-22 | Meidensha Corp | 半導体素子 |
-
1965
- 1965-10-13 GB GB43430/65A patent/GB1089407A/en not_active Expired
-
1966
- 1966-10-12 FR FR79655A patent/FR1496453A/fr not_active Expired
- 1966-10-12 NL NL6614367A patent/NL6614367A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6614367A (instruction) | 1967-04-14 |
| GB1089407A (en) | 1967-11-01 |
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