FR1537646A - Transistor planaire au silicium - Google Patents

Transistor planaire au silicium

Info

Publication number
FR1537646A
FR1537646A FR122266A FR122266A FR1537646A FR 1537646 A FR1537646 A FR 1537646A FR 122266 A FR122266 A FR 122266A FR 122266 A FR122266 A FR 122266A FR 1537646 A FR1537646 A FR 1537646A
Authority
FR
France
Prior art keywords
planar transistor
silicon planar
silicon
transistor
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR122266A
Other languages
English (en)
Inventor
Guenter Adam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
I T T IND
Original Assignee
I T T IND
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by I T T IND filed Critical I T T IND
Priority to FR122266A priority Critical patent/FR1537646A/fr
Application granted granted Critical
Publication of FR1537646A publication Critical patent/FR1537646A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR122266A 1966-09-26 1967-09-26 Transistor planaire au silicium Expired FR1537646A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR122266A FR1537646A (fr) 1966-09-26 1967-09-26 Transistor planaire au silicium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DED0051172 1966-09-26
FR122266A FR1537646A (fr) 1966-09-26 1967-09-26 Transistor planaire au silicium

Publications (1)

Publication Number Publication Date
FR1537646A true FR1537646A (fr) 1968-08-23

Family

ID=25972471

Family Applications (1)

Application Number Title Priority Date Filing Date
FR122266A Expired FR1537646A (fr) 1966-09-26 1967-09-26 Transistor planaire au silicium

Country Status (1)

Country Link
FR (1) FR1537646A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
US4769688A (en) * 1985-05-03 1988-09-06 Texas Instruments Incorporated Power bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
US4769688A (en) * 1985-05-03 1988-09-06 Texas Instruments Incorporated Power bipolar transistor

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