FR1475359A - Procédés pour protéger des parties de surfaces de silicium contre le dépôt de carbure de silicium - Google Patents

Procédés pour protéger des parties de surfaces de silicium contre le dépôt de carbure de silicium

Info

Publication number
FR1475359A
FR1475359A FR57086A FR57086A FR1475359A FR 1475359 A FR1475359 A FR 1475359A FR 57086 A FR57086 A FR 57086A FR 57086 A FR57086 A FR 57086A FR 1475359 A FR1475359 A FR 1475359A
Authority
FR
France
Prior art keywords
silicon
methods
surfaces against
protecting parts
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR57086A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to FR57086A priority Critical patent/FR1475359A/fr
Application granted granted Critical
Publication of FR1475359A publication Critical patent/FR1475359A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR57086A 1965-04-09 1966-04-08 Procédés pour protéger des parties de surfaces de silicium contre le dépôt de carbure de silicium Expired FR1475359A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR57086A FR1475359A (fr) 1965-04-09 1966-04-08 Procédés pour protéger des parties de surfaces de silicium contre le dépôt de carbure de silicium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44706565A 1965-04-09 1965-04-09
FR57086A FR1475359A (fr) 1965-04-09 1966-04-08 Procédés pour protéger des parties de surfaces de silicium contre le dépôt de carbure de silicium

Publications (1)

Publication Number Publication Date
FR1475359A true FR1475359A (fr) 1967-03-31

Family

ID=26169856

Family Applications (1)

Application Number Title Priority Date Filing Date
FR57086A Expired FR1475359A (fr) 1965-04-09 1966-04-08 Procédés pour protéger des parties de surfaces de silicium contre le dépôt de carbure de silicium

Country Status (1)

Country Link
FR (1) FR1475359A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2738384A1 (de) * 1976-08-27 1978-03-02 Tokyo Shibaura Electric Co Verfahren zur herstellung eines halbleiters

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2738384A1 (de) * 1976-08-27 1978-03-02 Tokyo Shibaura Electric Co Verfahren zur herstellung eines halbleiters
US4560642A (en) * 1976-08-27 1985-12-24 Toyko Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device

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