FR1460438A - Perfectionnements apportés aux éléments semi-conducteurs - Google Patents

Perfectionnements apportés aux éléments semi-conducteurs

Info

Publication number
FR1460438A
FR1460438A FR42992A FR42992A FR1460438A FR 1460438 A FR1460438 A FR 1460438A FR 42992 A FR42992 A FR 42992A FR 42992 A FR42992 A FR 42992A FR 1460438 A FR1460438 A FR 1460438A
Authority
FR
France
Prior art keywords
semiconductor elements
semiconductor
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR42992A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Application granted granted Critical
Publication of FR1460438A publication Critical patent/FR1460438A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
FR42992A 1964-12-22 1965-12-20 Perfectionnements apportés aux éléments semi-conducteurs Expired FR1460438A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED0046118 1964-12-22

Publications (1)

Publication Number Publication Date
FR1460438A true FR1460438A (fr) 1966-11-25

Family

ID=7049503

Family Applications (1)

Application Number Title Priority Date Filing Date
FR42992A Expired FR1460438A (fr) 1964-12-22 1965-12-20 Perfectionnements apportés aux éléments semi-conducteurs

Country Status (8)

Country Link
US (1) US3401318A (fr)
BE (1) BE674037A (fr)
DE (1) DE1465450B1 (fr)
DK (1) DK111529B (fr)
FR (1) FR1460438A (fr)
GB (1) GB1065930A (fr)
NL (1) NL6516741A (fr)
SE (1) SE305024B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831030A (en) * 1971-07-19 1974-08-20 Texas Instruments Inc Laser-operated system for spectroscopic analysis
US3906537A (en) * 1973-11-02 1975-09-16 Xerox Corp Solid state element comprising semi-conductive glass composition exhibiting negative incremental resistance and threshold switching
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration
US4445026A (en) * 1979-05-21 1984-04-24 Raychem Corporation Electrical devices comprising PTC conductive polymer elements
DE2939470C2 (de) * 1979-09-28 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Kaltleiter-Heizeinrichtung
JP3498919B2 (ja) * 1993-05-14 2004-02-23 清川メッキ工業株式会社 ヒューズ機能を有する金属皮膜抵抗器とその製造方法
US6670628B2 (en) * 2002-04-04 2003-12-30 Hewlett-Packard Company, L.P. Low heat loss and small contact area composite electrode for a phase change media memory device
TWI233204B (en) 2002-07-26 2005-05-21 Infineon Technologies Ag Nonvolatile memory element and associated production methods and memory element arrangements
KR100481865B1 (ko) * 2002-11-01 2005-04-11 삼성전자주식회사 상변환 기억소자 및 그 제조방법
DE10356285A1 (de) 2003-11-28 2005-06-30 Infineon Technologies Ag Integrierter Halbleiterspeicher und Verfahren zum Herstellen eines integrierten Halbleiterspeichers
US20100034010A1 (en) * 2008-08-06 2010-02-11 Seagate Technology Llc Memory devices with concentrated electrical fields
CN114967234B (zh) * 2022-05-26 2023-11-03 京东方科技集团股份有限公司 显示背板及其调节方法和显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB107795A (en) * 1916-07-08 1917-07-09 Toyojiro Terashima Improvements in Stereoscopes.
DE973206C (de) * 1949-05-31 1959-12-24 Siemens Ag Regelbarer Widerstand
NL251789A (fr) * 1959-05-26 1900-01-01
US3056100A (en) * 1959-12-04 1962-09-25 Bell Telephone Labor Inc Temperature compensated field effect resistor
US3017520A (en) * 1960-07-01 1962-01-16 Honeywell Regulator Co Integral transistor-thermistor and circuit using same for compensating for changing transistor temperature
NL284820A (fr) * 1961-11-06
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3331432A (en) * 1964-10-06 1967-07-18 Eugene S Cotton Asymmetrical heat conductor

Also Published As

Publication number Publication date
DE1465450B1 (de) 1970-07-23
SE305024B (fr) 1968-10-14
BE674037A (fr) 1966-04-15
US3401318A (en) 1968-09-10
GB1065930A (en) 1967-04-19
NL6516741A (fr) 1966-06-23
DK111529B (da) 1968-09-09

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