FR1441559A - Cellule de mémoire à diode tunnel - Google Patents
Cellule de mémoire à diode tunnelInfo
- Publication number
- FR1441559A FR1441559A FR11797A FR11797A FR1441559A FR 1441559 A FR1441559 A FR 1441559A FR 11797 A FR11797 A FR 11797A FR 11797 A FR11797 A FR 11797A FR 1441559 A FR1441559 A FR 1441559A
- Authority
- FR
- France
- Prior art keywords
- memory cell
- tunnel diode
- diode memory
- tunnel
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR11797A FR1441559A (fr) | 1965-04-02 | 1965-04-02 | Cellule de mémoire à diode tunnel |
BE678565D BE678565A (he) | 1965-04-02 | 1966-03-28 | |
GB1389566A GB1081570A (en) | 1965-04-02 | 1966-03-29 | Tunnel diode memory cell |
CH459066A CH454226A (fr) | 1965-04-02 | 1966-03-30 | Cellule de mémoire à diode tunnel |
DE19661499612 DE1499612B1 (de) | 1965-04-02 | 1966-03-30 | Speicher mit mindestens einer Speicherzelle mit Tunneldiode |
ES0324967A ES324967A1 (es) | 1965-04-02 | 1966-03-31 | Celula de memoria de diodo-tunel |
NL6604315A NL6604315A (he) | 1965-04-02 | 1966-03-31 | |
LU50810A LU50810A1 (he) | 1965-04-02 | 1966-04-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR11797A FR1441559A (fr) | 1965-04-02 | 1965-04-02 | Cellule de mémoire à diode tunnel |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1441559A true FR1441559A (fr) | 1966-06-10 |
Family
ID=8575570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR11797A Expired FR1441559A (fr) | 1965-04-02 | 1965-04-02 | Cellule de mémoire à diode tunnel |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE678565A (he) |
CH (1) | CH454226A (he) |
DE (1) | DE1499612B1 (he) |
ES (1) | ES324967A1 (he) |
FR (1) | FR1441559A (he) |
GB (1) | GB1081570A (he) |
LU (1) | LU50810A1 (he) |
NL (1) | NL6604315A (he) |
-
1965
- 1965-04-02 FR FR11797A patent/FR1441559A/fr not_active Expired
-
1966
- 1966-03-28 BE BE678565D patent/BE678565A/xx unknown
- 1966-03-29 GB GB1389566A patent/GB1081570A/en not_active Expired
- 1966-03-30 CH CH459066A patent/CH454226A/fr unknown
- 1966-03-30 DE DE19661499612 patent/DE1499612B1/de active Pending
- 1966-03-31 NL NL6604315A patent/NL6604315A/xx unknown
- 1966-03-31 ES ES0324967A patent/ES324967A1/es not_active Expired
- 1966-04-01 LU LU50810A patent/LU50810A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
ES324967A1 (es) | 1967-04-01 |
NL6604315A (he) | 1966-10-03 |
BE678565A (he) | 1966-09-01 |
GB1081570A (en) | 1967-08-31 |
LU50810A1 (he) | 1966-06-01 |
DE1499612B1 (de) | 1970-11-12 |
CH454226A (fr) | 1968-04-15 |
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