CH454226A - Cellule de mémoire à diode tunnel - Google Patents

Cellule de mémoire à diode tunnel

Info

Publication number
CH454226A
CH454226A CH459066A CH459066A CH454226A CH 454226 A CH454226 A CH 454226A CH 459066 A CH459066 A CH 459066A CH 459066 A CH459066 A CH 459066A CH 454226 A CH454226 A CH 454226A
Authority
CH
Switzerland
Prior art keywords
memory cell
tunnel diode
diode memory
tunnel
cell
Prior art date
Application number
CH459066A
Other languages
English (en)
French (fr)
Inventor
Robert Van Zurk
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of CH454226A publication Critical patent/CH454226A/fr

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
CH459066A 1965-04-02 1966-03-30 Cellule de mémoire à diode tunnel CH454226A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11797A FR1441559A (fr) 1965-04-02 1965-04-02 Cellule de mémoire à diode tunnel

Publications (1)

Publication Number Publication Date
CH454226A true CH454226A (fr) 1968-04-15

Family

ID=8575570

Family Applications (1)

Application Number Title Priority Date Filing Date
CH459066A CH454226A (fr) 1965-04-02 1966-03-30 Cellule de mémoire à diode tunnel

Country Status (8)

Country Link
BE (1) BE678565A (he)
CH (1) CH454226A (he)
DE (1) DE1499612B1 (he)
ES (1) ES324967A1 (he)
FR (1) FR1441559A (he)
GB (1) GB1081570A (he)
LU (1) LU50810A1 (he)
NL (1) NL6604315A (he)

Also Published As

Publication number Publication date
LU50810A1 (he) 1966-06-01
FR1441559A (fr) 1966-06-10
BE678565A (he) 1966-09-01
DE1499612B1 (de) 1970-11-12
NL6604315A (he) 1966-10-03
GB1081570A (en) 1967-08-31
ES324967A1 (es) 1967-04-01

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