GB1081570A - Tunnel diode memory cell - Google Patents
Tunnel diode memory cellInfo
- Publication number
- GB1081570A GB1081570A GB1389566A GB1389566A GB1081570A GB 1081570 A GB1081570 A GB 1081570A GB 1389566 A GB1389566 A GB 1389566A GB 1389566 A GB1389566 A GB 1389566A GB 1081570 A GB1081570 A GB 1081570A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diode
- cell
- tunnel diode
- tunnel
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
1,081,570. Tunnel diode circuits. COMMISSARIAT A L'ENERGIE ATOMIQUE. March 29, 1966 [April 2, 1965], No. 13895/66. Heading H3T. [Also in Division G4] A tunnel diode memory cell in which the tunnel diode 4, the anode of which is earthed and the cathode of which is biased for the diode to have two stable states, is connected to a coaxial cable 10 which reverses the input of the cell, and is also connected through a charge storage diode 14 to the output of the cell, and through a diode 20 to an energization circuit for the cell. Such cells may be used to form a ring counter. When tunnel diode 4 is in its lowvoltage state, representing " O," a positive energization pulse from source 34 is insufficient to cause diode 20 to conduct, and the cell is unaffected. When tunnel diode 4 is in its high voltage state, representing " 1," the positive energization pulse passes to diode 4 through diode 20 to switch diode 4 to its low-voltage state " O," and also through charge storage diode 14 (because of the charge stored therein during the period preceding the pulse) and through the reversing cable of the succeeding cell to switch it from " 0 " to " 1." Each cell may be provided with an output circuit 24, S to indicate the state of that cell.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR11797A FR1441559A (en) | 1965-04-02 | 1965-04-02 | Tunnel diode memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1081570A true GB1081570A (en) | 1967-08-31 |
Family
ID=8575570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1389566A Expired GB1081570A (en) | 1965-04-02 | 1966-03-29 | Tunnel diode memory cell |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE678565A (en) |
CH (1) | CH454226A (en) |
DE (1) | DE1499612B1 (en) |
ES (1) | ES324967A1 (en) |
FR (1) | FR1441559A (en) |
GB (1) | GB1081570A (en) |
LU (1) | LU50810A1 (en) |
NL (1) | NL6604315A (en) |
-
1965
- 1965-04-02 FR FR11797A patent/FR1441559A/en not_active Expired
-
1966
- 1966-03-28 BE BE678565D patent/BE678565A/xx unknown
- 1966-03-29 GB GB1389566A patent/GB1081570A/en not_active Expired
- 1966-03-30 CH CH459066A patent/CH454226A/en unknown
- 1966-03-30 DE DE19661499612 patent/DE1499612B1/en active Pending
- 1966-03-31 ES ES0324967A patent/ES324967A1/en not_active Expired
- 1966-03-31 NL NL6604315A patent/NL6604315A/xx unknown
- 1966-04-01 LU LU50810A patent/LU50810A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
BE678565A (en) | 1966-09-01 |
LU50810A1 (en) | 1966-06-01 |
ES324967A1 (en) | 1967-04-01 |
DE1499612B1 (en) | 1970-11-12 |
FR1441559A (en) | 1966-06-10 |
CH454226A (en) | 1968-04-15 |
NL6604315A (en) | 1966-10-03 |
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