GB1089805A - High-speed tunnel diode memory cell - Google Patents

High-speed tunnel diode memory cell

Info

Publication number
GB1089805A
GB1089805A GB1389666A GB1389666A GB1089805A GB 1089805 A GB1089805 A GB 1089805A GB 1389666 A GB1389666 A GB 1389666A GB 1389666 A GB1389666 A GB 1389666A GB 1089805 A GB1089805 A GB 1089805A
Authority
GB
United Kingdom
Prior art keywords
cell
pulse
diode
diodes
tunnel diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1389666A
Inventor
Robert Van Zurk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1089805A publication Critical patent/GB1089805A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/33—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

1,089,805. Tunnel diode circuits. COMMISSARIAT A L'ENERGIE ATOMIQUE. March 29, 1966 [April 2, 1965], No. 13896/66. Heading H3T. [Also in Division G4] In a tunnel diode memory cell, the tunnel diode 4, whose anode is earthed and whose cathode is biased so that the diode has two stable states, is connected to the input 3 of the cell and also to the output 5 of the cell through two series-aiding diodes 8, 10, the common point of the diodes being connected through a charge storage diode 12 to an energization circuit for the cell. Such cells may be used to construct a ring counter or a shift register. When tunnel diode 4 is in its low-voltage state, representing " 0," a positive energization pulse at A is insufficient to render diodes 12, 8 conductive, and the cell is unaffected. When diode 4 is in its high-voltage state, representing " 1," a positive pulse at A renders diodes 12, 8 conductive and passes to diode 4 to switch it to its low-voltage state. Diode 12 stores charge from positive pulse 14 so that the negative pulse which immediately follows the positive pulse passes through diodes 12 and 10 to the succeeding cell to switch it from the " 0 " to the " 1 " state. Each cell may be provided with an output circuit 26-30 to indicate the state of that cell. Fig. 3 (not shown) depicts a device for testing the resolution time of one such cell. The device includes a pulse generator (36) the pulses from which pass to a pulse doubler (40) which produces, from the single pulse, a pair of pulses separated by a variable time interval. The pair of pulses pass through an impedance transformer (44) comprised of a number of coaxial cables and including a pulse shaper (46) and thence to the energization circuit of the cell.
GB1389666A 1965-04-02 1966-03-29 High-speed tunnel diode memory cell Expired GB1089805A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11798A FR1441560A (en) 1965-04-02 1965-04-02 Tunnel diode fast memory cell

Publications (1)

Publication Number Publication Date
GB1089805A true GB1089805A (en) 1967-11-08

Family

ID=8575571

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1389666A Expired GB1089805A (en) 1965-04-02 1966-03-29 High-speed tunnel diode memory cell

Country Status (8)

Country Link
BE (1) BE678231A (en)
CH (1) CH454225A (en)
DE (1) DE1499611B1 (en)
ES (1) ES324968A1 (en)
FR (1) FR1441560A (en)
GB (1) GB1089805A (en)
LU (1) LU50794A1 (en)
NL (1) NL6604271A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953549A (en) * 1960-08-10 1964-03-25 Ass Elect Ind Improvements relating to binary matrix stores
GB929868A (en) * 1960-08-10 1963-06-26 Ass Elect Ind Improvements relating to electronic circuit arrangements

Also Published As

Publication number Publication date
DE1499611B1 (en) 1970-08-06
BE678231A (en) 1966-09-01
LU50794A1 (en) 1966-05-31
NL6604271A (en) 1966-10-03
ES324968A1 (en) 1967-04-01
CH454225A (en) 1968-04-15
FR1441560A (en) 1966-06-10

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