FR1441560A - Tunnel diode fast memory cell - Google Patents

Tunnel diode fast memory cell

Info

Publication number
FR1441560A
FR1441560A FR11798A FR11798A FR1441560A FR 1441560 A FR1441560 A FR 1441560A FR 11798 A FR11798 A FR 11798A FR 11798 A FR11798 A FR 11798A FR 1441560 A FR1441560 A FR 1441560A
Authority
FR
France
Prior art keywords
memory cell
tunnel diode
fast memory
diode fast
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR11798A
Other languages
French (fr)
Inventor
Robert Van Zurk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR11798A priority Critical patent/FR1441560A/en
Priority to BE678231D priority patent/BE678231A/xx
Priority to CH425666A priority patent/CH454225A/en
Priority to DE19661499611 priority patent/DE1499611B1/en
Priority to GB1389666A priority patent/GB1089805A/en
Priority to LU50794A priority patent/LU50794A1/xx
Priority to ES0324968A priority patent/ES324968A1/en
Priority to NL6604271A priority patent/NL6604271A/xx
Application granted granted Critical
Publication of FR1441560A publication Critical patent/FR1441560A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/33Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
FR11798A 1965-04-02 1965-04-02 Tunnel diode fast memory cell Expired FR1441560A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR11798A FR1441560A (en) 1965-04-02 1965-04-02 Tunnel diode fast memory cell
BE678231D BE678231A (en) 1965-04-02 1966-03-22
CH425666A CH454225A (en) 1965-04-02 1966-03-24 Tunnel Diode Memory Cell
DE19661499611 DE1499611B1 (en) 1965-04-02 1966-03-25 Memory cell with tunnel diode and memory with several of these memory cells
GB1389666A GB1089805A (en) 1965-04-02 1966-03-29 High-speed tunnel diode memory cell
LU50794A LU50794A1 (en) 1965-04-02 1966-03-30
ES0324968A ES324968A1 (en) 1965-04-02 1966-03-31 Cellula de memoria rapida de diodo-tunel. (Machine-translation by Google Translate, not legally binding)
NL6604271A NL6604271A (en) 1965-04-02 1966-03-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11798A FR1441560A (en) 1965-04-02 1965-04-02 Tunnel diode fast memory cell

Publications (1)

Publication Number Publication Date
FR1441560A true FR1441560A (en) 1966-06-10

Family

ID=8575571

Family Applications (1)

Application Number Title Priority Date Filing Date
FR11798A Expired FR1441560A (en) 1965-04-02 1965-04-02 Tunnel diode fast memory cell

Country Status (8)

Country Link
BE (1) BE678231A (en)
CH (1) CH454225A (en)
DE (1) DE1499611B1 (en)
ES (1) ES324968A1 (en)
FR (1) FR1441560A (en)
GB (1) GB1089805A (en)
LU (1) LU50794A1 (en)
NL (1) NL6604271A (en)

Also Published As

Publication number Publication date
ES324968A1 (en) 1967-04-01
NL6604271A (en) 1966-10-03
DE1499611B1 (en) 1970-08-06
LU50794A1 (en) 1966-05-31
BE678231A (en) 1966-09-01
GB1089805A (en) 1967-11-08
CH454225A (en) 1968-04-15

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