ES324967A1 - Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding) - Google Patents
Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES324967A1 ES324967A1 ES0324967A ES324967A ES324967A1 ES 324967 A1 ES324967 A1 ES 324967A1 ES 0324967 A ES0324967 A ES 0324967A ES 324967 A ES324967 A ES 324967A ES 324967 A1 ES324967 A1 ES 324967A1
- Authority
- ES
- Spain
- Prior art keywords
- diode
- translation
- machine
- memory cell
- legally binding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Diode-tunnel memory cell, specially constructed so that it constitutes with a series of cells equal to it a counting ring, characterized by the fact that the diode-tunnel whose anode is in the mass and the polarized cathode so that said diode has two stable states is attached, on the one hand, to a coaxial inverter input cable of this cell, while, on the other hand, is linked to the cathode of an accumulation effect diode connected to the output of the cell, as well as the cathode of a needle system diode that is part of the excitation circuit. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR11797A FR1441559A (en) | 1965-04-02 | 1965-04-02 | Tunnel diode memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
ES324967A1 true ES324967A1 (en) | 1967-04-01 |
Family
ID=8575570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0324967A Expired ES324967A1 (en) | 1965-04-02 | 1966-03-31 | Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding) |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE678565A (en) |
CH (1) | CH454226A (en) |
DE (1) | DE1499612B1 (en) |
ES (1) | ES324967A1 (en) |
FR (1) | FR1441559A (en) |
GB (1) | GB1081570A (en) |
LU (1) | LU50810A1 (en) |
NL (1) | NL6604315A (en) |
-
1965
- 1965-04-02 FR FR11797A patent/FR1441559A/en not_active Expired
-
1966
- 1966-03-28 BE BE678565D patent/BE678565A/xx unknown
- 1966-03-29 GB GB1389566A patent/GB1081570A/en not_active Expired
- 1966-03-30 DE DE19661499612 patent/DE1499612B1/en active Pending
- 1966-03-30 CH CH459066A patent/CH454226A/en unknown
- 1966-03-31 NL NL6604315A patent/NL6604315A/xx unknown
- 1966-03-31 ES ES0324967A patent/ES324967A1/en not_active Expired
- 1966-04-01 LU LU50810A patent/LU50810A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CH454226A (en) | 1968-04-15 |
BE678565A (en) | 1966-09-01 |
NL6604315A (en) | 1966-10-03 |
GB1081570A (en) | 1967-08-31 |
LU50810A1 (en) | 1966-06-01 |
FR1441559A (en) | 1966-06-10 |
DE1499612B1 (en) | 1970-11-12 |
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