FR1453354A - Mémoire rapide à basculateurs - Google Patents

Mémoire rapide à basculateurs

Info

Publication number
FR1453354A
FR1453354A FR24412A FR24412A FR1453354A FR 1453354 A FR1453354 A FR 1453354A FR 24412 A FR24412 A FR 24412A FR 24412 A FR24412 A FR 24412A FR 1453354 A FR1453354 A FR 1453354A
Authority
FR
France
Prior art keywords
switches
fast memory
fast
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR24412A
Other languages
English (en)
Inventor
Jean Louis Chambet-Falquet
Alain Pierre Le Gall
Raphael Guy Yelloz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoire Central de Telecommunications SA
Original Assignee
Laboratoire Central de Telecommunications SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoire Central de Telecommunications SA filed Critical Laboratoire Central de Telecommunications SA
Priority to FR24412A priority Critical patent/FR1453354A/fr
Application granted granted Critical
Publication of FR1453354A publication Critical patent/FR1453354A/fr
Priority to US564687A priority patent/US3503051A/en
Priority to NL6609806A priority patent/NL6609806A/xx
Priority to CH1018866A priority patent/CH443407A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
FR24412A 1965-07-13 1965-07-13 Mémoire rapide à basculateurs Expired FR1453354A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR24412A FR1453354A (fr) 1965-07-13 1965-07-13 Mémoire rapide à basculateurs
US564687A US3503051A (en) 1965-07-13 1966-07-12 Word organized memory comprising flip-flops with reset means associated with each flip-flop in the form of a clearing line generator coupled to the emitter of one of the transistors of the flip-flop
NL6609806A NL6609806A (fr) 1965-07-13 1966-07-13
CH1018866A CH443407A (fr) 1965-07-13 1966-07-13 Mémoire rapide à basculeurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR24412A FR1453354A (fr) 1965-07-13 1965-07-13 Mémoire rapide à basculateurs

Publications (1)

Publication Number Publication Date
FR1453354A true FR1453354A (fr) 1966-06-03

Family

ID=8584355

Family Applications (1)

Application Number Title Priority Date Filing Date
FR24412A Expired FR1453354A (fr) 1965-07-13 1965-07-13 Mémoire rapide à basculateurs

Country Status (4)

Country Link
US (1) US3503051A (fr)
CH (1) CH443407A (fr)
FR (1) FR1453354A (fr)
NL (1) NL6609806A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2077599A1 (fr) * 1970-01-15 1971-10-29 Ibm

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287575A (en) * 1979-12-28 1981-09-01 International Business Machines Corporation High speed high density, multi-port random access memory cell
US4393473A (en) * 1981-07-13 1983-07-12 Fairchild Camera & Instrument Corp. Random access memory preset circuitry

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177374A (en) * 1961-03-10 1965-04-06 Philco Corp Binary data transfer circuit
NL298196A (fr) * 1962-09-22
US3259757A (en) * 1963-05-20 1966-07-05 Bendix Corp High speed active triggering circuit for use with a binary
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system
US3292014A (en) * 1965-01-11 1966-12-13 Hewlett Packard Co Logic circuit having inductive elements to improve switching speed

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2077599A1 (fr) * 1970-01-15 1971-10-29 Ibm

Also Published As

Publication number Publication date
US3503051A (en) 1970-03-24
NL6609806A (fr) 1967-01-16
CH443407A (fr) 1967-09-15

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