CH443407A - Mémoire rapide à basculeurs - Google Patents

Mémoire rapide à basculeurs

Info

Publication number
CH443407A
CH443407A CH1018866A CH1018866A CH443407A CH 443407 A CH443407 A CH 443407A CH 1018866 A CH1018866 A CH 1018866A CH 1018866 A CH1018866 A CH 1018866A CH 443407 A CH443407 A CH 443407A
Authority
CH
Switzerland
Prior art keywords
rocker
fast
memory
rocker memory
fast rocker
Prior art date
Application number
CH1018866A
Other languages
English (en)
Inventor
Louis Chambet-Falquet Ant Jean
Pierre Le Gall Alain
Guy Yelloz Raphael
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of CH443407A publication Critical patent/CH443407A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
CH1018866A 1965-07-13 1966-07-13 Mémoire rapide à basculeurs CH443407A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR24412A FR1453354A (fr) 1965-07-13 1965-07-13 Mémoire rapide à basculateurs

Publications (1)

Publication Number Publication Date
CH443407A true CH443407A (fr) 1967-09-15

Family

ID=8584355

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1018866A CH443407A (fr) 1965-07-13 1966-07-13 Mémoire rapide à basculeurs

Country Status (4)

Country Link
US (1) US3503051A (fr)
CH (1) CH443407A (fr)
FR (1) FR1453354A (fr)
NL (1) NL6609806A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array
US4287575A (en) * 1979-12-28 1981-09-01 International Business Machines Corporation High speed high density, multi-port random access memory cell
US4393473A (en) * 1981-07-13 1983-07-12 Fairchild Camera & Instrument Corp. Random access memory preset circuitry

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177374A (en) * 1961-03-10 1965-04-06 Philco Corp Binary data transfer circuit
NL298196A (fr) * 1962-09-22
US3259757A (en) * 1963-05-20 1966-07-05 Bendix Corp High speed active triggering circuit for use with a binary
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system
US3292014A (en) * 1965-01-11 1966-12-13 Hewlett Packard Co Logic circuit having inductive elements to improve switching speed

Also Published As

Publication number Publication date
FR1453354A (fr) 1966-06-03
US3503051A (en) 1970-03-24
NL6609806A (fr) 1967-01-16

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