NL298196A - - Google Patents
Info
- Publication number
- NL298196A NL298196A NL298196DA NL298196A NL 298196 A NL298196 A NL 298196A NL 298196D A NL298196D A NL 298196DA NL 298196 A NL298196 A NL 298196A
- Authority
- NL
- Netherlands
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB36136/62A GB1024015A (en) | 1962-09-22 | 1962-09-22 | Improvements in and relating to storage and transfer devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL298196A true NL298196A (fr) |
Family
ID=10385329
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL298196D NL298196A (fr) | 1962-09-22 | ||
| NL63298196A NL155391B (nl) | 1962-09-22 | 1963-09-20 | Informatieverzamelinrichting, bestaande uit een schijfje halfgeleidermateriaal, waarop een matrix van verzamelcellen is gevormd. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL63298196A NL155391B (nl) | 1962-09-22 | 1963-09-20 | Informatieverzamelinrichting, bestaande uit een schijfje halfgeleidermateriaal, waarop een matrix van verzamelcellen is gevormd. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3218613A (fr) |
| CH (1) | CH414745A (fr) |
| GB (1) | GB1024015A (fr) |
| NL (2) | NL155391B (fr) |
| SE (1) | SE305013B (fr) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3562721A (en) * | 1963-03-05 | 1971-02-09 | Fairchild Camera Instr Co | Solid state switching and memory apparatus |
| US3307047A (en) * | 1964-04-30 | 1967-02-28 | Motorola Inc | Clocked set-reset flip-flop |
| US3354440A (en) * | 1965-04-19 | 1967-11-21 | Ibm | Nondestructive memory array |
| US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
| FR1453354A (fr) * | 1965-07-13 | 1966-06-03 | Labo Cent Telecommunicat | Mémoire rapide à basculateurs |
| US3510849A (en) * | 1965-08-09 | 1970-05-05 | Nippon Electric Co | Memory devices of the semiconductor type having high-speed readout means |
| US3492661A (en) * | 1965-12-17 | 1970-01-27 | Ibm | Monolithic associative memory cell |
| US3487376A (en) * | 1965-12-29 | 1969-12-30 | Honeywell Inc | Plural emitter semiconductive storage device |
| US3449728A (en) * | 1966-01-28 | 1969-06-10 | Ibm | Feedback current switch memory element |
| US3508209A (en) * | 1966-03-31 | 1970-04-21 | Ibm | Monolithic integrated memory array structure including fabrication and package therefor |
| US3483530A (en) * | 1966-05-16 | 1969-12-09 | Electronics Ass Inc | Discrete bistable digital memory system |
| US3488636A (en) * | 1966-08-22 | 1970-01-06 | Fairchild Camera Instr Co | Optically programmable read only memory |
| GB1162109A (en) * | 1966-12-22 | 1969-08-20 | Ibm | Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices |
| US3541531A (en) * | 1967-02-07 | 1970-11-17 | Bell Telephone Labor Inc | Semiconductive memory array wherein operating power is supplied via information paths |
| US3389383A (en) * | 1967-05-31 | 1968-06-18 | Gen Electric | Integrated circuit bistable memory cell |
| US3540005A (en) * | 1967-06-07 | 1970-11-10 | Gen Electric | Diode coupled read and write circuits for flip-flop memory |
| US3365707A (en) * | 1967-06-23 | 1968-01-23 | Rca Corp | Lsi array and standard cells |
| US3573754A (en) * | 1967-07-03 | 1971-04-06 | Texas Instruments Inc | Information transfer system |
| USRE30744E (en) * | 1967-08-22 | 1981-09-15 | Bunker Ramo Corporation | Digital memory apparatus |
| US3518635A (en) * | 1967-08-22 | 1970-06-30 | Bunker Ramo | Digital memory apparatus |
| DE1524873B2 (de) * | 1967-10-05 | 1970-12-23 | Ibm Deutschland | Monolithische integrierte Speicherzelle mit kleiner Ruheleistung |
| FR1555813A (fr) * | 1967-12-12 | 1969-01-31 | ||
| DE1774201B1 (de) * | 1968-05-02 | 1971-10-07 | Ibm Deutschland | Monolithisch integrierte speicherzelle |
| US3573756A (en) * | 1968-05-13 | 1971-04-06 | Motorola Inc | Associative memory circuitry |
| US3540010A (en) * | 1968-08-27 | 1970-11-10 | Bell Telephone Labor Inc | Diode-coupled semiconductive memory |
| US3530443A (en) * | 1968-11-27 | 1970-09-22 | Fairchild Camera Instr Co | Mos gated resistor memory cell |
| US3573573A (en) * | 1968-12-23 | 1971-04-06 | Ibm | Memory cell with buried load impedances |
| US3643235A (en) * | 1968-12-30 | 1972-02-15 | Ibm | Monolithic semiconductor memory |
| US3614750A (en) * | 1969-07-15 | 1971-10-19 | Ncr Co | Read-only memory circuit |
| US3626390A (en) * | 1969-11-13 | 1971-12-07 | Ibm | Minimemory cell with epitaxial layer resistors and diode isolation |
| US3660822A (en) * | 1969-12-15 | 1972-05-02 | Ibm | Variable breakdown storage cell with negative resistance operating characteristic |
| US3611317A (en) * | 1970-02-02 | 1971-10-05 | Bell Telephone Labor Inc | Nested chip arrangement for integrated circuit memories |
| US3654530A (en) * | 1970-06-22 | 1972-04-04 | Ibm | Integrated clamping circuit |
| US3631309A (en) * | 1970-07-23 | 1971-12-28 | Semiconductor Elect Memories | Integrated circuit bipolar memory cell |
| US3911470A (en) * | 1970-11-14 | 1975-10-07 | Philips Corp | Integrated circuit for logic purposes having transistors with different base thicknesses and method of manufacturing |
| JPS5320831B2 (fr) * | 1971-08-10 | 1978-06-29 | ||
| US3725881A (en) * | 1971-08-25 | 1973-04-03 | Intersil Inc | Two terminal bipolar memory cell |
| JPS4942249A (fr) * | 1972-03-06 | 1974-04-20 | ||
| US3818289A (en) * | 1972-04-10 | 1974-06-18 | Raytheon Co | Semiconductor integrated circuit structures |
| US3849872A (en) * | 1972-10-24 | 1974-11-26 | Ibm | Contacting integrated circuit chip terminal through the wafer kerf |
| US3986178A (en) * | 1975-07-28 | 1976-10-12 | Texas Instruments | Integrated injection logic random access memory |
| NL8200974A (nl) * | 1982-03-10 | 1983-10-03 | Philips Nv | Stroomdiskriminatie-schakeling. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2825889A (en) * | 1955-01-03 | 1958-03-04 | Ibm | Switching network |
| US2820155A (en) * | 1955-03-09 | 1958-01-14 | Bell Telephone Labor Inc | Negative impedance bistable signaloperated switch |
| US2945964A (en) * | 1956-10-31 | 1960-07-19 | Hughes Aircraft Co | Pulsed output transistor flip-flop |
| US3109163A (en) * | 1958-12-08 | 1963-10-29 | Gen Mills Inc | Memory system and method utilizing a semiconductor containing a grain boundary |
| GB945742A (fr) * | 1959-02-06 | Texas Instruments Inc | ||
| LU38605A1 (fr) * | 1959-05-06 | |||
| US3103599A (en) * | 1960-07-26 | 1963-09-10 | Integrated semiconductor representing |
-
0
- NL NL298196D patent/NL298196A/xx unknown
-
1962
- 1962-09-22 GB GB36136/62A patent/GB1024015A/en not_active Expired
-
1963
- 1963-09-18 US US309699A patent/US3218613A/en not_active Expired - Lifetime
- 1963-09-20 NL NL63298196A patent/NL155391B/xx unknown
- 1963-09-20 CH CH1163163A patent/CH414745A/de unknown
- 1963-09-20 SE SE10327/63A patent/SE305013B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH414745A (de) | 1966-06-15 |
| US3218613A (en) | 1965-11-16 |
| GB1024015A (en) | 1966-03-30 |
| SE305013B (fr) | 1968-10-14 |
| NL155391B (nl) | 1977-12-15 |