FR1439728A - Perfectionnements aux méthodes de fabrication des semi-conducteurs - Google Patents

Perfectionnements aux méthodes de fabrication des semi-conducteurs

Info

Publication number
FR1439728A
FR1439728A FR24489A FR24489A FR1439728A FR 1439728 A FR1439728 A FR 1439728A FR 24489 A FR24489 A FR 24489A FR 24489 A FR24489 A FR 24489A FR 1439728 A FR1439728 A FR 1439728A
Authority
FR
France
Prior art keywords
semiconductor manufacturing
manufacturing methods
methods
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR24489A
Other languages
English (en)
Inventor
George Richard Antell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR1439728A publication Critical patent/FR1439728A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR24489A 1964-07-14 1965-07-13 Perfectionnements aux méthodes de fabrication des semi-conducteurs Expired FR1439728A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28953/64A GB1037199A (en) 1964-07-14 1964-07-14 Improvements in or relating to transistor manufacture

Publications (1)

Publication Number Publication Date
FR1439728A true FR1439728A (fr) 1966-05-20

Family

ID=10283872

Family Applications (1)

Application Number Title Priority Date Filing Date
FR24489A Expired FR1439728A (fr) 1964-07-14 1965-07-13 Perfectionnements aux méthodes de fabrication des semi-conducteurs

Country Status (7)

Country Link
US (1) US3352725A (fr)
BE (1) BE666784A (fr)
CH (1) CH432662A (fr)
DE (1) DE1271841B (fr)
FR (1) FR1439728A (fr)
GB (1) GB1037199A (fr)
NL (1) NL6508999A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
US3541678A (en) * 1967-08-01 1970-11-24 United Aircraft Corp Method of making a gallium arsenide integrated circuit
US3728785A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices
US3798083A (en) * 1971-04-15 1974-03-19 Monsanto Co Fabrication of semiconductor devices
US3728784A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices
GB1446592A (en) * 1973-01-09 1976-08-18 English Electric Valve Co Ltd Dynode structures
FR2288390A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu
US4058413A (en) * 1976-05-13 1977-11-15 The United States Of America As Represented By The Secretary Of The Air Force Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
GB1569369A (en) * 1977-04-01 1980-06-11 Standard Telephones Cables Ltd Injection lasers
EP0055521B1 (fr) * 1980-11-29 1985-05-22 Kabushiki Kaisha Toshiba Procédé de remplissage d'une rainure dans un substrat semiconducteur
US10880088B1 (en) 2018-10-16 2020-12-29 Sprint Communications Company L.P. Data communication target control with contact tokens

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE506110A (fr) * 1950-09-29
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US3189800A (en) * 1959-12-14 1965-06-15 Westinghouse Electric Corp Multi-region two-terminal semiconductor device
GB1052379A (fr) * 1963-03-28 1900-01-01
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction
US3401508A (en) * 1965-08-02 1968-09-17 Int Harvester Co Cotton harvester with means for automatically cleaning trash screen

Also Published As

Publication number Publication date
CH432662A (de) 1967-03-31
BE666784A (fr) 1966-01-13
US3352725A (en) 1967-11-14
GB1037199A (en) 1966-07-27
DE1271841B (de) 1968-07-04
NL6508999A (fr) 1966-01-17

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