FR1360744A - Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances - Google Patents

Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances

Info

Publication number
FR1360744A
FR1360744A FR925466A FR925466A FR1360744A FR 1360744 A FR1360744 A FR 1360744A FR 925466 A FR925466 A FR 925466A FR 925466 A FR925466 A FR 925466A FR 1360744 A FR1360744 A FR 1360744A
Authority
FR
France
Prior art keywords
layers
semiconductor composed
powers
voltages
high voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR925466A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Secheron SA
Original Assignee
Ateliers de Secheron SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ateliers de Secheron SA filed Critical Ateliers de Secheron SA
Priority to FR925466A priority Critical patent/FR1360744A/fr
Application granted granted Critical
Publication of FR1360744A publication Critical patent/FR1360744A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR925466A 1962-02-20 1963-02-20 Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances Expired FR1360744A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR925466A FR1360744A (fr) 1962-02-20 1963-02-20 Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH202162A CH414866A (de) 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement
FR925466A FR1360744A (fr) 1962-02-20 1963-02-20 Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances

Publications (1)

Publication Number Publication Date
FR1360744A true FR1360744A (fr) 1964-05-15

Family

ID=4224045

Family Applications (1)

Application Number Title Priority Date Filing Date
FR925466A Expired FR1360744A (fr) 1962-02-20 1963-02-20 Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances

Country Status (6)

Country Link
AT (1) AT255569B (el)
BE (1) BE628619A (el)
CH (1) CH414866A (el)
DE (2) DE1439215B2 (el)
FR (1) FR1360744A (el)
GB (1) GB1031043A (el)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437886A (en) * 1965-03-25 1969-04-08 Asea Ab Thyristor with positively bevelled junctions
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor
US3987479A (en) * 1973-07-06 1976-10-19 Bbc Brown Boveri & Company Limited Semiconductor power component

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589529C3 (de) * 1967-06-19 1982-10-14 Robert Bosch Gmbh, 7000 Stuttgart Planartransistor
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
CH566643A5 (el) * 1973-10-11 1975-09-15 Bbc Brown Boveri & Cie
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437886A (en) * 1965-03-25 1969-04-08 Asea Ab Thyristor with positively bevelled junctions
DE1539636B1 (de) * 1965-03-25 1971-01-14 Allmaenna Svenska Elek Ska Ab Als Thyristor ausgebildetes Halbleiterbauelement mt profilierter Randzone
US3987479A (en) * 1973-07-06 1976-10-19 Bbc Brown Boveri & Company Limited Semiconductor power component
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Also Published As

Publication number Publication date
DE1439215B2 (de) 1973-10-18
BE628619A (el)
GB1031043A (en) 1966-05-25
DE1439215A1 (de) 1968-10-17
CH414866A (de) 1966-06-15
AT255569B (de) 1967-07-10
DE1789155B1 (de) 1976-03-11

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