CH414866A - Aus p- und n-Schichten aufgebautes Gleichrichterelement - Google Patents
Aus p- und n-Schichten aufgebautes GleichrichterelementInfo
- Publication number
- CH414866A CH414866A CH202162A CH202162A CH414866A CH 414866 A CH414866 A CH 414866A CH 202162 A CH202162 A CH 202162A CH 202162 A CH202162 A CH 202162A CH 414866 A CH414866 A CH 414866A
- Authority
- CH
- Switzerland
- Prior art keywords
- layers
- element made
- rectifier element
- rectifier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE628619D BE628619A (el) | 1962-02-20 | ||
CH202162A CH414866A (de) | 1962-02-20 | 1962-02-20 | Aus p- und n-Schichten aufgebautes Gleichrichterelement |
DE1963S0083800 DE1439215B2 (de) | 1962-02-20 | 1963-02-18 | Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben |
DE19631789155 DE1789155B1 (de) | 1962-02-20 | 1963-02-18 | Leistungshalbleiterbauelement und verfahren zum herstellen |
AT123263A AT255569B (de) | 1962-02-20 | 1963-02-18 | Mehrschichthalbleiter, insbesondere Thyristor für Hochspannung und große Durchgangsleistungen |
GB685263A GB1031043A (en) | 1962-02-20 | 1963-02-20 | Improvements in or relating to semi-conductor devices |
FR925466A FR1360744A (fr) | 1962-02-20 | 1963-02-20 | Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH202162A CH414866A (de) | 1962-02-20 | 1962-02-20 | Aus p- und n-Schichten aufgebautes Gleichrichterelement |
Publications (1)
Publication Number | Publication Date |
---|---|
CH414866A true CH414866A (de) | 1966-06-15 |
Family
ID=4224045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH202162A CH414866A (de) | 1962-02-20 | 1962-02-20 | Aus p- und n-Schichten aufgebautes Gleichrichterelement |
Country Status (6)
Country | Link |
---|---|
AT (1) | AT255569B (el) |
BE (1) | BE628619A (el) |
CH (1) | CH414866A (el) |
DE (2) | DE1439215B2 (el) |
FR (1) | FR1360744A (el) |
GB (1) | GB1031043A (el) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2354854A1 (de) * | 1973-10-11 | 1975-04-30 | Bbc Brown Boveri & Cie | Verfahren und vorrichtung zur herstellung eines halbleiterkoerpers |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6603372A (el) * | 1965-03-25 | 1966-09-26 | ||
DE1589529C3 (de) * | 1967-06-19 | 1982-10-14 | Robert Bosch Gmbh, 7000 Stuttgart | Planartransistor |
US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
DE7328984U (de) * | 1973-07-06 | 1975-05-15 | Bbc Ag Brown Boveri & Cie | Leistungshalbleiterbauelement |
DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
DE102021116206B3 (de) * | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
-
0
- BE BE628619D patent/BE628619A/xx unknown
-
1962
- 1962-02-20 CH CH202162A patent/CH414866A/de unknown
-
1963
- 1963-02-18 DE DE1963S0083800 patent/DE1439215B2/de active Granted
- 1963-02-18 AT AT123263A patent/AT255569B/de active
- 1963-02-18 DE DE19631789155 patent/DE1789155B1/de not_active Ceased
- 1963-02-20 FR FR925466A patent/FR1360744A/fr not_active Expired
- 1963-02-20 GB GB685263A patent/GB1031043A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2354854A1 (de) * | 1973-10-11 | 1975-04-30 | Bbc Brown Boveri & Cie | Verfahren und vorrichtung zur herstellung eines halbleiterkoerpers |
Also Published As
Publication number | Publication date |
---|---|
DE1439215B2 (de) | 1973-10-18 |
BE628619A (el) | |
GB1031043A (en) | 1966-05-25 |
DE1439215A1 (de) | 1968-10-17 |
FR1360744A (fr) | 1964-05-15 |
AT255569B (de) | 1967-07-10 |
DE1789155B1 (de) | 1976-03-11 |
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