FR1321379A - Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin - Google Patents

Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin

Info

Publication number
FR1321379A
FR1321379A FR896985A FR896985A FR1321379A FR 1321379 A FR1321379 A FR 1321379A FR 896985 A FR896985 A FR 896985A FR 896985 A FR896985 A FR 896985A FR 1321379 A FR1321379 A FR 1321379A
Authority
FR
France
Prior art keywords
junction
making
semiconductor device
single crystal
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR896985A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1321379A publication Critical patent/FR1321379A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/039—Displace P-N junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR896985A 1961-05-10 1962-05-09 Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin Expired FR1321379A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0073904 DE1141724C2 (de) 1961-05-10 1961-05-10 Verfahren zum Herstellen eines p-n-UEbergangs in einer einkristallinen Halbleiteranordnung

Publications (1)

Publication Number Publication Date
FR1321379A true FR1321379A (fr) 1963-03-15

Family

ID=7504268

Family Applications (1)

Application Number Title Priority Date Filing Date
FR896985A Expired FR1321379A (fr) 1961-05-10 1962-05-09 Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin

Country Status (6)

Country Link
US (1) US3260624A (US20090163788A1-20090625-C00002.png)
CH (1) CH415856A (US20090163788A1-20090625-C00002.png)
DE (1) DE1141724C2 (US20090163788A1-20090625-C00002.png)
FR (1) FR1321379A (US20090163788A1-20090625-C00002.png)
GB (1) GB966257A (US20090163788A1-20090625-C00002.png)
NL (1) NL275313A (US20090163788A1-20090625-C00002.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1489251B1 (de) * 1963-10-28 1970-02-12 Rca Corp Steuerbarerhalbleitergleichrichter
FR2077621A1 (US20090163788A1-20090625-C00002.png) * 1970-01-26 1971-10-29 Gen Electric

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE633263A (US20090163788A1-20090625-C00002.png) * 1962-06-06
GB1052447A (US20090163788A1-20090625-C00002.png) * 1962-09-15
GB1051720A (US20090163788A1-20090625-C00002.png) * 1963-03-07 1900-01-01
DE1227154B (de) * 1963-07-23 1966-10-20 Siemens Ag Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung
GB1071294A (en) * 1963-12-17 1967-06-07 Mullard Ltd Improvements in and relating to the manufacture of transistors
US3327181A (en) * 1964-03-24 1967-06-20 Crystalonics Inc Epitaxial transistor and method of manufacture
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
US3354009A (en) * 1965-06-29 1967-11-21 Ibm Method of forming a fabricating semiconductor by doubly diffusion
US3418473A (en) * 1965-08-12 1968-12-24 Honeywell Inc Solid state junction device for ultraviolet detection
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
US3463972A (en) * 1966-06-15 1969-08-26 Fairchild Camera Instr Co Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
GB1101909A (en) * 1967-01-13 1968-02-07 Standard Telephones Cables Ltd Method for producing gallium arsenide devices
US3488235A (en) * 1967-04-25 1970-01-06 Westinghouse Electric Corp Triple-epitaxial layer high power,high speed transistor
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3879230A (en) * 1970-02-07 1975-04-22 Tokyo Shibaura Electric Co Semiconductor device diffusion source containing as impurities AS and P or B
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3798079A (en) * 1972-06-05 1974-03-19 Westinghouse Electric Corp Triple diffused high voltage transistor
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA629213A (en) * 1961-10-17 Hoselitz Kurt Manufacture of semi-conductor device
BE509317A (US20090163788A1-20090625-C00002.png) * 1951-03-07 1900-01-01
DE1058632B (de) * 1955-12-03 1959-06-04 Deutsche Bundespost Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen
BE557168A (US20090163788A1-20090625-C00002.png) * 1956-05-02
US2899344A (en) * 1958-04-30 1959-08-11 Rinse in
NL229074A (US20090163788A1-20090625-C00002.png) * 1958-06-26
NL240883A (US20090163788A1-20090625-C00002.png) * 1958-07-17
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1489251B1 (de) * 1963-10-28 1970-02-12 Rca Corp Steuerbarerhalbleitergleichrichter
FR2077621A1 (US20090163788A1-20090625-C00002.png) * 1970-01-26 1971-10-29 Gen Electric

Also Published As

Publication number Publication date
CH415856A (de) 1966-06-30
NL275313A (US20090163788A1-20090625-C00002.png)
DE1141724B (de) 1962-12-27
GB966257A (en) 1964-08-06
US3260624A (en) 1966-07-12
DE1141724C2 (de) 1963-07-25

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