FR1372290A - Dispositif et procédé de dépôt epitaxial - Google Patents

Dispositif et procédé de dépôt epitaxial

Info

Publication number
FR1372290A
FR1372290A FR951233A FR951233A FR1372290A FR 1372290 A FR1372290 A FR 1372290A FR 951233 A FR951233 A FR 951233A FR 951233 A FR951233 A FR 951233A FR 1372290 A FR1372290 A FR 1372290A
Authority
FR
France
Prior art keywords
epitaxial deposition
epitaxial
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR951233A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR951233A priority Critical patent/FR1372290A/fr
Application granted granted Critical
Publication of FR1372290A publication Critical patent/FR1372290A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR951233A 1963-10-21 1963-10-21 Dispositif et procédé de dépôt epitaxial Expired FR1372290A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR951233A FR1372290A (fr) 1963-10-21 1963-10-21 Dispositif et procédé de dépôt epitaxial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR951233A FR1372290A (fr) 1963-10-21 1963-10-21 Dispositif et procédé de dépôt epitaxial

Publications (1)

Publication Number Publication Date
FR1372290A true FR1372290A (fr) 1964-09-11

Family

ID=8814808

Family Applications (1)

Application Number Title Priority Date Filing Date
FR951233A Expired FR1372290A (fr) 1963-10-21 1963-10-21 Dispositif et procédé de dépôt epitaxial

Country Status (1)

Country Link
FR (1) FR1372290A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289833B (de) * 1964-12-29 1969-02-27 Siemens Ag Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289833B (de) * 1964-12-29 1969-02-27 Siemens Ag Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht

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