CA629213A - Manufacture of semi-conductor device - Google Patents

Manufacture of semi-conductor device

Info

Publication number
CA629213A
CA629213A CA629213A CA629213DA CA629213A CA 629213 A CA629213 A CA 629213A CA 629213 A CA629213 A CA 629213A CA 629213D A CA629213D A CA 629213DA CA 629213 A CA629213 A CA 629213A
Authority
CA
Canada
Prior art keywords
semi
manufacture
conductor device
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA629213A
Inventor
Hoselitz Kurt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Publication date
Application granted granted Critical
Publication of CA629213A publication Critical patent/CA629213A/en
Expired legal-status Critical Current

Links

CA629213A Manufacture of semi-conductor device Expired CA629213A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA629213T

Publications (1)

Publication Number Publication Date
CA629213A true CA629213A (en) 1961-10-17

Family

ID=35885346

Family Applications (1)

Application Number Title Priority Date Filing Date
CA629213A Expired CA629213A (en) Manufacture of semi-conductor device

Country Status (1)

Country Link
CA (1) CA629213A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260624A (en) * 1961-05-10 1966-07-12 Siemens Ag Method of producing a p-n junction in a monocrystalline semiconductor device
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260624A (en) * 1961-05-10 1966-07-12 Siemens Ag Method of producing a p-n junction in a monocrystalline semiconductor device
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device

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