FR1291322A - Perfectionnements aux semi-conducteurs - Google Patents

Perfectionnements aux semi-conducteurs

Info

Publication number
FR1291322A
FR1291322A FR863986A FR863986A FR1291322A FR 1291322 A FR1291322 A FR 1291322A FR 863986 A FR863986 A FR 863986A FR 863986 A FR863986 A FR 863986A FR 1291322 A FR1291322 A FR 1291322A
Authority
FR
France
Prior art keywords
refinements
semiconductor
semiconductor refinements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR863986A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1291322A publication Critical patent/FR1291322A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
FR863986A 1960-06-13 1961-06-06 Perfectionnements aux semi-conducteurs Expired FR1291322A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3560660A 1960-06-13 1960-06-13

Publications (1)

Publication Number Publication Date
FR1291322A true FR1291322A (fr) 1962-04-20

Family

ID=21883704

Family Applications (1)

Application Number Title Priority Date Filing Date
FR863986A Expired FR1291322A (fr) 1960-06-13 1961-06-06 Perfectionnements aux semi-conducteurs

Country Status (3)

Country Link
US (1) US3124703A (fr)
DE (1) DE1238574B (fr)
FR (1) FR1291322A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
DE1464983B1 (de) * 1963-12-19 1970-01-15 Gen Electric In zwei Richtungen schaltbares und steuerbares Halbleiterbauelement

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202832A (en) * 1960-06-17 1965-08-24 Transitron Electronic Corp Controllable semiconductor device
FR84004E (fr) * 1961-05-09 1964-11-13 Siemens Ag Dispositif semi-conducteur
NL293292A (fr) * 1962-06-11
US3239728A (en) * 1962-07-17 1966-03-08 Gen Electric Semiconductor switch
GB1052447A (fr) * 1962-09-15
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
US3246172A (en) * 1963-03-26 1966-04-12 Richard J Sanford Four-layer semiconductor switch with means to provide recombination centers
US3416049A (en) * 1963-05-17 1968-12-10 Sylvania Electric Prod Integrated bias resistors for micro-logic circuitry
US3265909A (en) * 1963-09-03 1966-08-09 Gen Electric Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3274463A (en) * 1964-02-11 1966-09-20 Electronic Controls Corp Symmetrically switching integrated semiconductor devices
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3284681A (en) * 1964-07-01 1966-11-08 Gen Electric Pnpn semiconductor switching devices with stabilized firing characteristics
US3328652A (en) * 1964-07-20 1967-06-27 Gen Electric Voltage comparator
FR1483998A (fr) * 1965-05-14 1967-09-13
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
SE311701B (fr) * 1966-07-07 1969-06-23 Asea Ab
US3462620A (en) * 1967-07-18 1969-08-19 Int Rectifier Corp Axial bias gate for controlled rectifiers
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
JPS501990B1 (fr) * 1970-06-02 1975-01-22
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
US4646122A (en) * 1983-03-11 1987-02-24 Hitachi, Ltd. Semiconductor device with floating remote gate turn-off means
US4651189A (en) * 1983-12-19 1987-03-17 Hitachi, Ltd. Semiconductor device provided with electrically floating control electrode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525202A (fr) * 1952-12-19
BE526156A (fr) * 1953-02-02
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit
NL113266C (fr) * 1957-01-18
GB887327A (en) * 1957-05-31 1962-01-17 Ibm Improvements in transistors
NL239104A (fr) * 1958-05-26 1900-01-01 Western Electric Co
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
NL260481A (fr) * 1960-02-08
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
DE1464983B1 (de) * 1963-12-19 1970-01-15 Gen Electric In zwei Richtungen schaltbares und steuerbares Halbleiterbauelement

Also Published As

Publication number Publication date
DE1238574B (de) 1967-04-13
US3124703A (en) 1964-03-10

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