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Siemens Schuckertwerke AG
Siemens AG
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Siemens Schuckertwerke AG
Siemens AG
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Priority claimed from DES62993Aexternal-prioritypatent/DE1226984B/de
Application filed by Siemens Schuckertwerke AG, Siemens AGfiledCriticalSiemens Schuckertwerke AG
Priority to FR825791ApriorityCriticalpatent/FR1255773A/fr
Application grantedgrantedCritical
Publication of FR1255773ApublicationCriticalpatent/FR1255773A/fr
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
C30B13/16—Heating of the molten zone
C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
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Chemical & Material Sciences
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Engineering & Computer Science
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Crystallography & Structural Chemistry
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Materials Engineering
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Metallurgy
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Organic Chemistry
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FR825791A1959-05-141960-04-29Dispositif pour la fusion par zones sans creuset de barreaux semi-conducteurs, en particulier de barreaux de silicium
ExpiredFR1255773A
(fr)