FR1237641A - Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body - Google Patents

Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body

Info

Publication number
FR1237641A
FR1237641A FR807709A FR807709A FR1237641A FR 1237641 A FR1237641 A FR 1237641A FR 807709 A FR807709 A FR 807709A FR 807709 A FR807709 A FR 807709A FR 1237641 A FR1237641 A FR 1237641A
Authority
FR
France
Prior art keywords
junction
making
contact
barrier layer
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR807709A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1237641A publication Critical patent/FR1237641A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Conductive Materials (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
FR807709A 1958-10-24 1959-10-16 Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body Expired FR1237641A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60369A DE1132404B (en) 1958-10-24 1958-10-24 Method for producing a pn junction in a body made of a semiconductor base material by alloying a pill of a doping metal
DES60606A DE1197178B (en) 1958-10-24 1958-11-14 Method for producing a pn junction in a semiconductor body

Publications (1)

Publication Number Publication Date
FR1237641A true FR1237641A (en) 1960-11-25

Family

ID=25995589

Family Applications (1)

Application Number Title Priority Date Filing Date
FR807709A Expired FR1237641A (en) 1958-10-24 1959-10-16 Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body

Country Status (5)

Country Link
CH (1) CH383719A (en)
DE (2) DE1132404B (en)
FR (1) FR1237641A (en)
GB (1) GB916671A (en)
NL (1) NL244622A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244622A (en) 1958-10-24

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE485103C (en) * 1926-08-20 1931-06-12 Siemens & Halske Akt Ges Process for the production of beryllium coatings on metals or alloys
DE1052575B (en) 1954-06-23 1959-03-12 Siemens Ag Process for the production of contacts on semiconductor bodies for semiconductor arrangements
BE539320A (en) * 1955-01-11
GB775616A (en) * 1955-04-15 1957-05-29 Sylvania Electric Prod Processing of alloy junction devices
NL244622A (en) 1958-10-24

Also Published As

Publication number Publication date
DE1197178B (en) 1965-07-22
GB916671A (en) 1963-01-23
CH383719A (en) 1964-10-31
NL244622A (en)
DE1132404B (en) 1962-06-28

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