FR1237641A - Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body - Google Patents

Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body

Info

Publication number
FR1237641A
FR1237641A FR807709A FR807709A FR1237641A FR 1237641 A FR1237641 A FR 1237641A FR 807709 A FR807709 A FR 807709A FR 807709 A FR807709 A FR 807709A FR 1237641 A FR1237641 A FR 1237641A
Authority
FR
France
Prior art keywords
junction
making
contact
barrier layer
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR807709A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1237641A publication Critical patent/FR1237641A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Conductive Materials (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR807709A 1958-10-24 1959-10-16 Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body Expired FR1237641A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60369A DE1132404B (en) 1958-10-24 1958-10-24 Method for producing a pn junction in a body made of a semiconductor base material by alloying a pill of a doping metal
DES60606A DE1197178B (en) 1958-10-24 1958-11-14 Method for producing a pn junction in a semiconductor body

Publications (1)

Publication Number Publication Date
FR1237641A true FR1237641A (en) 1960-11-25

Family

ID=25995589

Family Applications (1)

Application Number Title Priority Date Filing Date
FR807709A Expired FR1237641A (en) 1958-10-24 1959-10-16 Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body

Country Status (5)

Country Link
CH (1) CH383719A (en)
DE (2) DE1132404B (en)
FR (1) FR1237641A (en)
GB (1) GB916671A (en)
NL (1) NL244622A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE485103C (en) * 1926-08-20 1931-06-12 Siemens & Halske Akt Ges Process for the production of beryllium coatings on metals or alloys
BE546819A (en) * 1955-01-11
GB775616A (en) * 1955-04-15 1957-05-29 Sylvania Electric Prod Processing of alloy junction devices

Also Published As

Publication number Publication date
GB916671A (en) 1963-01-23
DE1197178B (en) 1965-07-22
NL244622A (en)
DE1132404B (en) 1962-06-28
CH383719A (en) 1964-10-31

Similar Documents

Publication Publication Date Title
BE725491A (en) Metal electrode bearing on one of its faces a layer of semi-conductive metal oxide
ES307516A1 (en) Method of protection of a pn unión that separates two semiconductors of opposite conductivities. (Machine-translation by Google Translate, not legally binding)
GB1297899A (en)
IT965825B (en) PROCEDURE AND DEVICE FOR COLD DRAWING OF METAL PIPES
BE579805A (en) Process for the surface treatment of semiconductor elements comprising several electrodes and at least one p-n junction.
IL30464A0 (en) Method of fabricating semiconductor device contact
GB1400040A (en) Field effect transistor having two gates for functioning at extremely high frequencies
FR1237641A (en) Method for making a pn junction or contact without an alloy barrier layer between a doping metal and a semiconductor body
FR1178414A (en) Method of manufacturing an alloy electrode on a semiconductor body consisting of germanium
FR1221029A (en) Method and liquid for etching a metallic surface, in particular copper
BR6803425D0 (en) METAL OXIDE SEMICONDUCTOR PROTECTIVE TRANSISTOR
BE584479A (en) Method and device for tin soldering of metal parts and in particular of collectors on radiator bundles.
FR1237614A (en) Method and device for irrigating the machining gap between the electrode and the workpiece on spark erosion machines
FR1215359A (en) Spacer for ball bearings
CH405869A (en) Process for forming a protective surface layer on aluminum and aluminum alloys
GB836191A (en) Method of making a non-rectifying contact to germanium
GB983623A (en) Improvements relating to semi-conductor devices
BE606757Q (en) Method and device for manufacturing metal conduits welded with tin, in particular made of zinc.
FR1346546A (en) Method of diffusion of impurity in a semiconductor
ES334878A1 (en) Method of manufacturing semiconductor devices. (Machine-translation by Google Translate, not legally binding)
AU404390B2 (en) Method of forming lubricating films of molybdenum desulfide on metal bearing surface
FR1219737A (en) Method and device for the manufacture of cylinders without machining and cylinders thus obtained
FR1382237A (en) Improvements to the processes for forming a protective coating on the surface of metals, to the electrolytes used for this purpose, and to the processes for the preparation of such electrolytes
GB1041220A (en) Improvements in semi-conductor devices
FR1536463A (en) Method of localized formation of small metal balls