CH383719A - Method for alloying a doping metal into a semiconductor body, in particular for producing a pn junction or a non-blocking contact - Google Patents

Method for alloying a doping metal into a semiconductor body, in particular for producing a pn junction or a non-blocking contact

Info

Publication number
CH383719A
CH383719A CH7957959A CH7957959A CH383719A CH 383719 A CH383719 A CH 383719A CH 7957959 A CH7957959 A CH 7957959A CH 7957959 A CH7957959 A CH 7957959A CH 383719 A CH383719 A CH 383719A
Authority
CH
Switzerland
Prior art keywords
alloying
junction
producing
semiconductor body
doping metal
Prior art date
Application number
CH7957959A
Other languages
German (de)
Inventor
Heinz Dr Henker
Erich Dr Pammer
Dieter Dipl Phys Enderlein
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH383719A publication Critical patent/CH383719A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Conductive Materials (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Electrolytic Production Of Metals (AREA)
CH7957959A 1958-10-24 1959-10-16 Method for alloying a doping metal into a semiconductor body, in particular for producing a pn junction or a non-blocking contact CH383719A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60369A DE1132404B (en) 1958-10-24 1958-10-24 Method for producing a pn junction in a body made of a semiconductor base material by alloying a pill of a doping metal
DES60606A DE1197178B (en) 1958-10-24 1958-11-14 Method for producing a pn junction in a semiconductor body

Publications (1)

Publication Number Publication Date
CH383719A true CH383719A (en) 1964-10-31

Family

ID=25995589

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7957959A CH383719A (en) 1958-10-24 1959-10-16 Method for alloying a doping metal into a semiconductor body, in particular for producing a pn junction or a non-blocking contact

Country Status (5)

Country Link
CH (1) CH383719A (en)
DE (2) DE1132404B (en)
FR (1) FR1237641A (en)
GB (1) GB916671A (en)
NL (1) NL244622A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244622A (en) 1958-10-24

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE485103C (en) * 1926-08-20 1931-06-12 Siemens & Halske Akt Ges Process for the production of beryllium coatings on metals or alloys
DE1052575B (en) 1954-06-23 1959-03-12 Siemens Ag Process for the production of contacts on semiconductor bodies for semiconductor arrangements
BE546819A (en) * 1955-01-11
GB775616A (en) * 1955-04-15 1957-05-29 Sylvania Electric Prod Processing of alloy junction devices
NL244622A (en) 1958-10-24

Also Published As

Publication number Publication date
FR1237641A (en) 1960-11-25
GB916671A (en) 1963-01-23
DE1197178B (en) 1965-07-22
DE1132404B (en) 1962-06-28
NL244622A (en)

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