FR1210386A - Dispositifs de commande semi-conducteurs - Google Patents

Dispositifs de commande semi-conducteurs

Info

Publication number
FR1210386A
FR1210386A FR1210386DA FR1210386A FR 1210386 A FR1210386 A FR 1210386A FR 1210386D A FR1210386D A FR 1210386DA FR 1210386 A FR1210386 A FR 1210386A
Authority
FR
France
Prior art keywords
control devices
semiconductor control
semiconductor
devices
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Application granted granted Critical
Publication of FR1210386A publication Critical patent/FR1210386A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/06—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1210386D 1957-09-23 1958-09-23 Dispositifs de commande semi-conducteurs Expired FR1210386A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB29800/57A GB849477A (en) 1957-09-23 1957-09-23 Improvements in or relating to semiconductor control devices

Publications (1)

Publication Number Publication Date
FR1210386A true FR1210386A (fr) 1960-03-08

Family

ID=10297363

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1210386D Expired FR1210386A (fr) 1957-09-23 1958-09-23 Dispositifs de commande semi-conducteurs

Country Status (3)

Country Link
DE (1) DE1083938B (OSRAM)
FR (1) FR1210386A (OSRAM)
GB (1) GB849477A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022461A1 (de) * 1979-07-03 1981-01-21 Licentia Patent-Verwaltungs-GmbH Negativer Halbleiter-Widerstand

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121714C (OSRAM) * 1959-12-14
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
NL267818A (OSRAM) * 1960-08-02
NL276298A (OSRAM) * 1961-04-03 1900-01-01
NL275667A (OSRAM) * 1961-04-28
DE1232267B (de) * 1961-05-27 1967-01-12 Telefunken Patent Verfahren zur Herstellung eines Halbleiterbauelementes mit Mesastruktur
DE1171538B (de) * 1961-06-02 1964-06-04 Telefunken Patent Halbleiteranordnung mit mindestens zwei Legierungselektroden auf einer Oberflaeche des Halbleiterkoerpers
US3150021A (en) * 1961-07-25 1964-09-22 Nippon Electric Co Method of manufacturing semiconductor devices
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
JP5317826B2 (ja) * 2009-05-19 2013-10-16 キヤノン株式会社 容量型機械電気変換素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525428A (OSRAM) * 1952-12-30
BE527570A (OSRAM) * 1953-05-21
NL92927C (OSRAM) * 1954-07-27
FR1131253A (fr) * 1955-09-14 1957-02-19 Csf Perfectionnements aux transistors à effet de champ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022461A1 (de) * 1979-07-03 1981-01-21 Licentia Patent-Verwaltungs-GmbH Negativer Halbleiter-Widerstand

Also Published As

Publication number Publication date
DE1083938B (de) 1960-06-23
GB849477A (en) 1960-09-28
DE1083938C2 (OSRAM) 1960-12-15

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